Results 111 to 120 of about 24,368 (233)

Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells

, 2014
National Basic Research Program of China [2012CB619300]; National Natural Science Foundation of China [10990103, 51002058, 11104150, 60976042, 60906023, 61006046, 61377034]The surface plasmon (SP)-exciton coupling effect has attractive potential ...
Chen, SC, Yin, J, Chen, YH, Shengchang Chen, Changqing Chen, Chen, Yonghai, 李静, Li, J, Kang, Junyong, Li, Wei, Chen, Shengchang, Jin, P, Jing Li, Jun Yin, Yanyan Fang, Yin, Jun, Wei Li, 康俊勇, Wu, ZH, Zhihao Wu, Chen, Changqing, Kang, JY, Junyong Kang, Fang, Yanyan, Jiangnan Dai, Dai, Jiangnan, Chen, CQ, Yonghai Chen, Li, Jing, Fang, YY, Dai, JN, Yang Li, Li, Y, Li, W, Li, Yang, Wu, Zhihao, Jin, Peng, Peng Jin   +37 more
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Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors

, 2014
In order to enhance the performance of AlGaN/GaN high electron mobility transistor (HEMT) biosensor, millimeter grade AlGaN/GaN HEMT structure have been designed and successfully fabricated.
Cheng, JJ (程珺洁), Li, HW (Li Hai-Wen), Li, JD (李加东), Wu, DM (吴东岷), Miao, B (苗斌), Wei, XW (魏晓伟), Zhang, ZQ (张志强)   +6 more
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Measurement of electrostatic fields in Ge-doped AlGaN structures by off-axis electron holography [PDF]

BIO Web of Conferences
Palais Alexis, Cooper David, Monroy Eva, Hyot Bérangère   +3 more
doaj   +1 more source

Simulation of polarization effects in AlGaN/GaN heterojunction

, 2004
A method for introducing polarization effects in the simulation of GaN-based heterojunction devices is proposed. A delta doping layer is inserted at the interface of heterojunction and the ionized donors or acceptors act as polarization induced fixed ...
Li, N, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: lina@red.semi.ac.cn, Li, N, Zhao, DG, Yang, H   +3 more
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Women’s Rights and Gender Equality in Turkey| The Politicization of Rape as a Consequence of Western Modernity and Religious Conservatism: Competing Media Narratives on Gender

International Journal of Communication, 2020
Through a feminist critical discourse analysis of newspaper columns from both secular/nationalist and religio-conservative outlets, this article illustrates how the issue of increased violence against women—which was made visible by the murder and ...
Ece Algan
doaj  

Ultrasensitive detection of Hg2+ using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

, 2014
An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg2+. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg2+ and ...
Cheng JJ(程珺洁), 程珺洁, Wu, ZY, Pei RJ(裴仁军), Wang JE(王金娥)   +4 more
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Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices

, 2018
There have been recent research advances in AlGaN-based self-assembled nanowires (NWs) as building blocks for ultraviolet (UV) optoelectronics grown by plasma-assisted molecular beam epitaxy.
Prabaswara, Aditya, Tangi, Malleswararao, Albadri, Abdulrahman M., Ooi, Boon S., Priante, Davide, Alaskar, Yazeed, Al-Maghrabi, Latifah, Ng, Tien Khee, Liu, Guangyu, Kang, Chun Hong, Alyamani, Ahmed Y., Min, Jungwook, Zhao, Chao   +12 more
core   +1 more source

European Governance and Democratic Legitimacy of EU Legislation Formation

Journal of Business Administration and Social Studies
The basic of governance approach that is used after the 1990s as a new public administration model is public participation in public policies and government.
Müge Algan
doaj   +1 more source

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized Al_xGa_2–xO₃ Sidewalls

AlGaN and GaN sidewalls were turned into AlxGa2–xO3 and Ga2O3, respectively, by thermal oxidation to improve the optoelectrical characteristics of deep ultraviolet (DUV) light-emitting diodes (LEDs).
Cheng-Huang Kuo (12436477), Jong-Shing Bow (12436480), Tien-Yu Wang (10710677), Syuan-Yu Sie (12436474), Sheng-Po Chang (3944918), Wei-Chih Lai (4620559), Jinn-Kong Sheu (4531711)   +6 more
core   +1 more source

Modulation magnesium-doping in AlGaN/GaN superlattices

, 2000
Low resistivity of p-type Mg-doped AlGaN/GaN superlattices (SLs) is demonstrated. The resistivity of the SLs is less than 0.6 Omega .cm. and the measured hole concentration is higher than 1x10(18)cm(-3). The resistivity of SLs is much lower, and the hole
Liu XL, Lu DC, Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China., Yuan HR, Wang XH   +4 more
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