Results 111 to 120 of about 26,376 (228)
, 2013 [[abstract]]In this study, we report that the p-type GaN (p-GaN) capping layer grown on top of p-type AlGaN (p-AlGaN) and the fabrication of recessed channels are used to demonstrate a new type of nonalloyed ohmic contact.
Lin, Yow-Jon
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Low Thermal Resistance Architectures for AlGaN‐Based Semiconductor Devices
Advanced Electronic MaterialsNext‐generation high‐power radio‐frequency (RF) devices increasingly demand transistors that operate efficiently with high gain at high frequencies. High‐aluminum‐content ultrawide‐bandgap (UWBG) AlGaN alloys have shown great potential for enabling such ...
Kidus Guye +6 more
doaj +1 more source
, 2004 Polarization effects in AlGaN/GaN heterojunction are simulated based on a traditional semiconductor device simulator. A delta doping layer is purposely inserted at the interface of the heterojunction in the simulation, so the ionized donors or acceptors ...
Li, N +3 more
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, 2007 A new AlGaN/AlN/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded AlGaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD).
Luo WJ (Luo Wei-Jun) +9 more
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, 2012 [[abstract]]In this study, the effect of AlN materials as passivation over AlGaN layer on AlGaN/GaN HEMTs performance was investigated using fully-coupled electro-thermo-mechanical analysis by TCAD simulations and analytic calculations. It found that AlN
Prabowo, Briliant Adhi
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Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors
, 2014 In order to enhance the performance of AlGaN/GaN high electron mobility transistor (HEMT) biosensor, millimeter grade AlGaN/GaN HEMT structure have been designed and successfully fabricated.
Cheng, JJ (程珺洁) +6 more
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Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures
, 2000 Indium (In)-doping was applied in GaN layers during growth of AlGaN/GaN heterostructure with unintentionally doped or modulation Si-doped AlGaN layers.
Liu XL +6 more
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Development of solar-blind AlGaN 128x128 ultraviolet focal plane arrays
, 2008 This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128x128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA architecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to
Yuan, YG +6 more
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Enhanced Breakdown Voltage in GaN HEMTs Using Step-Graded AlGaN Buffer Layers. [PDF]
Micromachines (Basel)Bai J +5 more
europepmc +1 more source
, 2011 The growth rate and its relationship with growth conditions of AlGaN alloy films by metalorganic chemical vapor deposition (MOCVD) are investigated. It is found that both parasitic reaction and competitive adsorption play important roles in determining ...
Wang H (王辉) +11 more
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