Results 121 to 130 of about 26,376 (228)

Structural Design of AlGaN Deep-Ultraviolet Laser at Wavelength 266.3 nm with Graded Electron Blocking Layer and Composite Quantum Wells/Barriers. [PDF]

ACS Omega
Haider SK, Rehman HU, Bi W, Wang F, Liu Y.   +4 more
europepmc   +1 more source

The influence of Schottky contact metals on the strain of AlGaN barrier layers

, 2008
Ir and Ni Schottky contacts on strained Al0.25Ga0.75N/GaN heterostructures, and the Ni Schottky contact with different areas on strained Al0.3Ga0.7N/GaN heterostructures have been prepared.
Corrigan, TD, Wang, Z, Wang, ZG, You, ZD, Zhao, JZ, Lin, ZJ, Lin, ZJ, Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China. 电子邮箱地址: linzj@sdu.edu.cn, Lu, W   +7 more
core  

High-Sensitivity AlGaN/GaN HFET Implantable Neural Probe Without Gate Control Enabled by Photoelectrochemical Etching. [PDF]

Micromachines (Basel)
Ding Y, Cao X, Li Y, Yang X, Wen Y, Li X, Huang X, Li Z, Weng J, Zhang B.   +9 more
europepmc   +1 more source

Modeling and Sensitivity Analysis of GaN HEMT Biosensor. [PDF]

Biosensors (Basel)
Yesayan A, Sallese JM.
europepmc   +1 more source

AlGaN/GaN异质结中极化效应的模拟

, 2004
提出了一种将极化效应引入GaN基异质结器件模拟中的方法.在传统器件模拟软件中,通过在异质结界面插入δ掺杂层,利用其离化的施主或受主充当极化产生的固定电荷从而引入极化效应.模拟了Ga面生长和N面生长的AlGaN/GaN单异质结,结果显示只有前者在异质结界面有载流子限制效应,而后者没有;Ga面生长的AlGaN/GaN异质结界面处自由电子面密度随Al组分以及AlGaN的厚度增加而增加.以上模拟结果与其他报道中的实验以及计算结果一致 ...
李娜, 赵德刚, 杨辉
core  

Improved Comprehensive Performance of GaN-Based E-Mode HEMTs with a Thin Al₂O₃ Interlayer. [PDF]

Nanomaterials (Basel)
Qiao G, Liu H, Feng C, Liao Y, Gong R, Guo H, Shao P, Chen D.   +7 more
europepmc   +1 more source

AlGaN-puolijohdepinnan ominaisuuksia

, 2018
Tässä Pro Gradu -tutkielmassa tutkittiin alumiinigalliumnitridi- (AlGaN) puolijohdepinnan ominaisuuksia. Päätavoitteena oli selvittää, miten kemiallinen vetykloridipohjainen (HCl) etsaus vaikuttaa AlGaN-pinnan kemiallisiin ja sähköisiin ominaisuuksiin ...
Voutilainen, Viivi
core  

AlGaN/GaN HEMT H₂ sensor with integrated Wheatstone bridge and on-chip microheater for 0.1-ppm detection. [PDF]

Microsyst Nanoeng
Yu Y, Liu Y, Ren W, Liu Y, Zhang Y, Wang Z, Zhuo Q, Liu Z, Wang T, Sun J.   +9 more
europepmc   +1 more source

Self-Consistent Electro-Thermo-Mechanical Analysis of AlN Passivation Effect on AlGaN/GaN HEMTs

, 2012
[[abstract]]"In this article, the effect of AlN materials as passivation over AlGaN layer on AlGaN/GaN HEMTs performance was investigated firstly using electro-thermomechanical coupled methodology by both TCAD simulation and analytic calculation.
許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming
core  

Nitride-Based Quantum Structures in Optoelectronics-A Survey of Colors. [PDF]

Materials (Basel)
Gorczyca I, Suski T, Perlin P, Staszczak G.   +3 more
europepmc   +1 more source