Results 121 to 130 of about 24,368 (233)

原子層堆積Al2O3をゲート絶縁膜とするAlGaN/GaN MOSFETの作製と評価 [PDF]

, 2011
Al_2O_3/AlGaN/GaN MOSFETのFET特性改善のため、Al_2O_3成膜前の前処理として(NH_4)_2S(硫化アンモニウム)処理を検討した。まず初めに、Al_2O_3/n-GaN MOSダイオードを用いて、(NH_4)_2S処理の効果を検討した所、Al_2O_3成膜前に(NH_4)_2S処理を行うことでC-Vカーブの傾きが(NH_4)_2S処理なしに比べて急峻になり、界面準位密度も低減した。次に本(NH_4)_2S処理をAl_2O_3/AlGaN/GaN MOSFETに適用したところ、
岸本, 茂, 水谷, 孝, 合田, 祐司, 宮崎, 英志, Miyazaki, Eiji, Gouda, Takeshi, Mizutani, Takashi, Kishimoto, Shigeru   +7 more
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Al组分AlGaN材料优化生长与组分研究

, 2012
研究了金属有机化合物化学气相沉积(MOCVD)系统外延高Al组分较厚AlGaN薄膜材料的生长技术。实验发现,AlGaN/GaN结构中的AlGaN材料的相分离现象可能是由于过低的生长V/III以及材料所受的张应力状态所致,而V/III过高时则会出现Al源的并入效率饱和。采用AlN过渡层技术,外延生长了表面无裂纹的45%Al组分较厚(100～200nm)AlGaN薄膜材料。所得材料的Al组分与气相Al组分相同,(0002)面X射线衍射(XRD)双晶摇摆曲线半高宽(FWHM)为376arcsec ...
韩军, 冯雷, 范亚明, 邓旭光, 邢艳辉, 张宝顺, 汪加兴   +6 more
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High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer

, 2008
When AlGaN is grown on GaN template, crack networks invariably generate when the thickness of the AlGaN layers over GaN exceeds the critical value. We used thin high temperature deposited AlN layer (HT-AlN) as the interlayer between GaN template and ...
Yan, JC, Wang, JX, Liu, Z, Li, JM, Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China., Liu, NX   +5 more
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Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer

, 2007
A new AlGaN/AlN/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded AlGaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD).
Luo WJ (Luo Wei-Jun), Wang XL (Wang Xiao-Liang), Hu GX (Hu Guo-Xin), Tang J (Tang Jian), Xiao HL (Xiao Hong-Ling), Ma, ZY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: mazhiyong@mail.semi.ac.cn, Ma ZY (Ma Zhi-Yong), Li JP (Li Jian-Ping), Li JM (Li Jin-Min), Ran JX (Ran Jun-Xue)   +9 more
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Polarization effects simulation of AlGaN/GaN heterojunction by using a symbolistic delta-doping layer

, 2004
Polarization effects in AlGaN/GaN heterojunction are simulated based on a traditional semiconductor device simulator. A delta doping layer is purposely inserted at the interface of the heterojunction in the simulation, so the ionized donors or acceptors ...
Li, N, Li, N, Inst Semicond, CAS, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: lina@red.semi.ac.cn, Zhao, DG, Yang, H   +3 more
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Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs

, 2012
In this paper, we demonstrate a nano-channel array (NCA) structure to realize the control of threshold voltage (Vth) of AlGaN/GaN HEMTs. The fabricated NCA structure consists of multiple nano-channels parallelly connected together.
Yong Cai（蔡勇）, Cheng P. Wen, Jinyan Wang, Chunhong Zeng（曾春红）, Shenghou Liu（刘胜厚）, Rumin Gong（龚孺敏）, Jingjing Wang, Jiayun Yin, Zhihong Feng, Hua Qin（秦华）, Baoshun Zhang（张宝顺）, Wenhua Shi（时文华）   +11 more
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Nitride-Based Quantum Structures in Optoelectronics-A Survey of Colors. [PDF]

Materials (Basel)
Gorczyca I, Suski T, Perlin P, Staszczak G.   +3 more
europepmc   +1 more source

AlGaN/GaN HEMT H₂ sensor with integrated Wheatstone bridge and on-chip microheater for 0.1-ppm detection. [PDF]

Microsyst Nanoeng
Yu Y, Liu Y, Ren W, Liu Y, Zhang Y, Wang Z, Zhuo Q, Liu Z, Wang T, Sun J.   +9 more
europepmc   +1 more source

Weak polarization electric field Ⅲ-N LEDs on polar plane with enhanced efficiency and strong lateral carrier confinement. [PDF]

Light Sci Appl
Zhao J, Zuo C, Zhang L, Gao H, Liu Y, Deng G, Li X, Zhang Y.   +7 more
europepmc   +1 more source

Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures

, 2009
Using the measured capacitance-voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated
Corrigan TD, Lu W, Lin ZJ, Zhao JZ, Zhang Y, Wang ZG, Chen H, Lu YJ, Zhao JZ Shandong Univ Sch Phys Jinan 250100 Peoples R China. E-mail Address: linzj@sdu.edu.cn   +8 more
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