Results 141 to 150 of about 26,376 (228)

Size-Dependent Emission Enhancement in Deep-Ultraviolet AlGaN Microrods. [PDF]

Nanomaterials (Basel)
Sun X, Yan Z, Xu T, Zhu J, Xie Z, Xiu X, Chen D, Liu B, Shi Y, Zhang R, Zheng Y, Chen P.   +11 more
europepmc   +1 more source

Study of polarization effect in AlGaN/AlGaN double quantum wells

Study of polarization effect in AlGaN/AlGaN double quantum wells
identifier:oai:t2r2.star.titech.ac.jp ...
openaire   +1 more source

High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiN_x Layer Etching Technique. [PDF]

Micromachines (Basel)
Cao X, Wang P, Mi M, Liu X, Xiao D, Du X, Lu M, Chen F, Huang Z, Yao J, Liang Y, Cui K, Ma X, Hao Y.   +13 more
europepmc   +1 more source

Electrical Properties and Performance Enhancement of AlGaN/GaN/Si HEMTs. [PDF]

Micromachines (Basel)
Mosbahi H, Ali MKM, Gassoumi M.
europepmc   +1 more source

Celestial neuromorphics based on ferroelectric gallium oxide. [PDF]

Natl Sci Rev
Xu K, Guan Z, Pei M, Luo Y, Zhu Y, Yu X, Hao L, Gu S, Yao J, Li Z, Pei X, Zhang Y, Wang H, Wan C, Wan Q, Zhang R, Ye J.   +16 more
europepmc   +1 more source

Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures. [PDF]

Sensors (Basel)
Moscotin M, Jorudas J, Prystawko P, Saniuk M, Kovalevskij V, Kašalynas I.   +5 more
europepmc   +1 more source

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
Lee KH, Yang Y, Heo J, Kim JH.
europepmc   +1 more source

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

ACS Appl Electron Mater
Kim DW, Kim B, Cho Y, Kim S, Gong Y, Baek Y, Bae B, Noh YK, Bae S, Park DH, Lee K.   +10 more
europepmc   +1 more source

Impact of Carbon Diffusion Induced Stress on the Properties of Diamond/GaN Heterojunctions. [PDF]

Nanomaterials (Basel)
Sun H, Wu M, Xu P, Yuan C, Yang L, Lu H, Hou B, Zhang M, Ma X, Hao Y.   +9 more
europepmc   +1 more source

Spiers Memorial Lecture: Emerging semiconductors viewed through the lens of a scanning electron microscope.

Faraday Discuss
Martin RW.
europepmc   +1 more source