Results 141 to 150 of about 3,102 (186)

Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

physica status solidi (b), 2007
AbstractTwo‐dimensional electron gas transport in AlN/GaN and AlGaN/GaN heterostructures has been investigated employing geometrical magnetoresistance measurements and quantitative mobility‐spectrum analysis. The channel magnetoresistance of ungated four‐terminal test structures, with an effective width to length ratio of 10, was measured using pulsed ...
G. A. Umana‐Membreno, G. Parish, B. D. Nener, D. Buttari, S. Keller, U. K. Mishra   +5 more
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Polarized Photoluminescence Study on AlGaN of AlGaN/GaN Heterostructure

MRS Proceedings, 2005
AbstractOptical properties of tensile strained AlxGa1-xN films of AlxGa1-xN/GaN heterostructures grown on sapphire were investigated by using polarization-resolved photoluminescence spectroscopy. Emissions from AlxGa1-xN with polarization of E//c and E⊥c were obtained at different peak energies.
Sachio Kitagawa, Kenichi kosaka, Tadayoshi Tuchiya, Akira Suzuki, Tsutomu Araki, Yasushi Nanishi   +5 more
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Advantages of deep-UV AlGaN light-emitting diodes with an AlGaN/AlGaN superlattices electron blocking layer

Applied Physics A, 2015
In this work, the AlGaN/AlGaN superlattices (SLs) electron blocking layer (EBL) is designed to replace conventional AlGaN EBL in the AlGaN-based deep-UV light-emitting diodes (DUV-LEDs). The simulation results show that the DUV-LEDs with SLs possess higher emission power and internal quantum efficiency as compared to those with conventional EBL, which ...
Yi An Yin, Naiyin Wang, Shuti Li, Yong Zhang, Guanghan Fan   +4 more
openaire   +1 more source

Investigation of the inserted LT-AlGaN interlayer in AlGaN/GaN/AlGaN DH-FET strucutre on Si substrates

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 2014
A novel AlGaN/GaN/AlGaN double-heterostructure field effect transistor (DH-FET) structure with an inserted LT-AlGaN interlayer grown on 150 mm Si substrate has been studied. The DH-FET structure has been characterized by transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD).
Yu-Lin Hsiao, Chia-Ao Chang, Edward Yi Chang   +2 more
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Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate

Superlattices and Microstructures, 2018
Abstract A short channel AlGaN/GaN HEMT with AlGaN/InGaN/AlGaN quantum well plate is proposed and investigated. Benefited by the 2DEG confining effect and plated-like function, the QWP-HEMT exhibits weaker short channel effects and stronger reverse blocking, where in maximum the DIBL reduction and the critical electric field improvement are 88.9% and
Zeheng Wang, Jun Cao, Ruize Sun, Fangzhou Wang, Yuanzhe Yao   +4 more
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Photocurrent Properties of the AlGaN/GaN/AlGaN Multilayer Structure on Si

Chinese Physics Letters, 2001
Al0.2Ga0.8N/GaN/Al0.2Ga0.8N multilayer structures and GaN monolayer structures with AlN as the buffer layers were grown on Si substrates by metal-organic chemical vapour deposition. The photocurrent responses of these structures were measured and analysed. The multilayer structures showed a high response in a narrow range of wavelengths.
Jiang Ruo-Lian, Zhao Zuo-Ming, Chen Pen, Xi Dong-Juan, Shen Bo, Zhang Rong, Zheng You-Dou   +6 more
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Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs

Journal of Crystal Growth, 2004
For nitride heterojunction field-effect transistors, the heterojunction forming the electron barrier has to be designed based on trade-offs between lattice mismatch, two-dimensional electron gas concentration, and alloy scattering. In this work, we study the use of a superlattice-based barrier which effectively increases the heterojunction barrier ...
Uttiya Chowdhury, Raymond K. Price, Michael M. Wong, Dongwon Yoo, Xuebing Zhang, Milton Feng, Russell D. Dupuis   +6 more
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Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures

Journal of Applied Physics, 2001
The pseudodielectric function spectra 〈ε〉 of wurtzite GaN, AlGaN, and GaN/AlGaN heterostructures were determined for photon energies ranging from 2 to 5 eV, using variable angle spectroscopic ellipsometry (SE). Samples were grown by low-pressure metalorganic chemical vapor deposition on c-plane sapphire substrates.
J. Wagner, H. Obloh, M. Kunzer, M. Maier, K. Köhler, B. Johs   +5 more
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Growth and characterization of AlGaN/GaN/AlGaN field effect transistors

physica status solidi c, 2010
AbstractField effect transistors (FETs) on both GaN and AlGaN buffers were grown and compared. Development of high quality AlGaN is the key to obtain high performance AlGaN buffer FETs. An optimized Al0.04Ga0.96N layer on SiC substrate had (002) and (201) X‐ray rocking curves with full wide at half maximum (FWHM) of 140 and 450 arc sec, respectively ...
Z. Chen, Y. Pei, R. Chu, S. Newman, D. Brown, R. Chung, S. Keller, S. P. DenBaars, S. Nakamura, U. K. Mishra   +9 more
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Phonon Modes in AlGaN Alloy with AlGaN/GaN MQW Interlayer

Advanced Materials Research, 2011
500nm AlGaN thick layer with AlGaN/GaN MQW interlayer was grown on sapphire substrate for UV detector and resonant tunneling diodes by MOCVD equipment. We were strongly interesting in the stress information of QW. There are a big mismatch of lattice between AlN and GaN.The growth of thick and high quality AlGaN is difficult task.
Jin Zhou, Yu Feng Jin, En Guang Dai, Zhi Jian Yang, Bo Shen   +4 more
openaire   +1 more source