Impact of Carbon Diffusion Induced Stress on the Properties of Diamond/GaN Heterojunctions. [PDF]
Nanomaterials (Basel)Sun H +9 more
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Study of polarization effect in AlGaN/AlGaN double quantum wells
Study of polarization effect in AlGaN/AlGaN double quantum wellsidentifier:oai:t2r2.star.titech.ac.jp ...
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Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture. [PDF]
Sensors (Basel)Sengupta R, Sarusi G.
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SIMS Investigation of Al Diffusion Across Interfaces in AlGaN/GaN and AlN/GaN Heterostructures. [PDF]
Nanomaterials (Basel)Laifi J, Hasaneen MF, Bchetnia A.
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Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal. [PDF]
Micromachines (Basel)Pan J +8 more
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Auger Electron Spectroscopy for Chemical Analysis of Passivated (Al,Ga)N-Based Systems. [PDF]
Micromachines (Basel)Domanowska A, Adamowicz B.
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Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]
Materials (Basel)Weis M.
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Atomically confined insertion for 2D strain and polarization engineered GaN electronics. [PDF]
Nat CommunShi Y +13 more
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Investigation of III-Nitride MEMS Pressure Sensor for High-Temperature Applications. [PDF]
Micromachines (Basel)Prio MH +6 more
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Design and Optimization of AlGaN/AlN/GaN L‑SBD for Radiofrequency Applications. [PDF]
ACS OmegaDudekula S +5 more
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