Results 151 to 160 of about 26,376 (228)

Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture. [PDF]

Sensors (Basel)
Sengupta R, Sarusi G.
europepmc   +1 more source

SIMS Investigation of Al Diffusion Across Interfaces in AlGaN/GaN and AlN/GaN Heterostructures. [PDF]

Nanomaterials (Basel)
Laifi J, Hasaneen MF, Bchetnia A.
europepmc   +1 more source

Auger Electron Spectroscopy for Chemical Analysis of Passivated (Al,Ga)N-Based Systems. [PDF]

Micromachines (Basel)
Domanowska A, Adamowicz B.
europepmc   +1 more source

A robust GaN p-FET with unconventional electron conduction. [PDF]

Commun Eng
Kumar M, Xu L, Labau T, Biscarrat J, Torrengo S, Lecouvey C, Charles M, Elias C, Olivier A, Petitjean EC, Saghi Z, Zgheib J, Escoffier R, Buckley J.   +13 more
europepmc   +1 more source

Investigation of III-Nitride MEMS Pressure Sensor for High-Temperature Applications. [PDF]

Micromachines (Basel)
Prio MH, Morshed M, Muthusamy L, Raju MSEH, Towfeeq I, Gajula D, Koley G.   +6 more
europepmc   +1 more source

Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal. [PDF]

Micromachines (Basel)
Pan J, Ye X, Jiang R, Miao A, Miao F, Mao Z, Peng Y, Guo H, Lei J.   +8 more
europepmc   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]

Adv Sci (Weinh)
Liu F, Xue J, Wu G, Yuan J, Yao J, Liu R, Guo Z, Li Z, Hu H, Sun W, Zhao C, Zhang C, Liu X, Zhang K, Zhang J, Hao Y.   +15 more
europepmc   +1 more source

Design and Optimization of AlGaN/AlN/GaN L‑SBD for Radiofrequency Applications. [PDF]

ACS Omega
Dudekula S, Jaiswal NK, Ebel T, Chowdam VP, Koo SM, Dhanaraj K.   +5 more
europepmc   +1 more source

Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]

Materials (Basel)
Weis M.
europepmc   +1 more source