Results 151 to 160 of about 3,102 (186)
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Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure
Journal of Crystal Growth, 2001Abstract We have studied the effect of a low-temperature-deposited (LT-) AlGaN interlayer on AlGaN/GaN heterostructure. High-crystalline-quality and crack-free AlGaN layers covering the entire compositional range were realized using the LT-AlN interlayer.
Satoshi Kamiyama +8 more
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Surface control of AlGaN for the stability improvement of AlGaN/GaN HEMTs
2008 Device Research Conference, 2008Highly stable and reliable operation is absolutely required for GaN-based high-efficiency power switching devices and high-power RF AlGaN/GaN HEMTs. For the improvement of operation stability in such devices, in this paper, the surface control technologies will be addressed by introducing an ultrathin-Al-layer process and a multi-mesa-channel structure
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Stimulated emission in AlGaN/AlGaN quantum wells with different Al content
Applied Physics Letters, 2012Stimulated emission (SE) is studied in AlGaN/AlGaN multiple quantum wells (MQWs) with different Al content grown on sapphire substrate. The spectra of spontaneous and stimulated emission and their transformations with increasing temperature as well as stimulated emission thresholds were measured in the temperature range from 8 to 300 K. Phonon-assisted
J. Mickevičius +8 more
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Journal of Display Technology, 2016
An Al composition graded superlattice AlGaN/AlGaN layer was adopted in AlGaN-based deep ultraviolet light-emitting diodes as a hole reserving layer and relieved the strain between the last quantum barrier and the AlGaN electron blocking layer. The simulation shows that the light output power and internal quantum efficiency of the newly structure are ...
Shanlin Wang +4 more
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An Al composition graded superlattice AlGaN/AlGaN layer was adopted in AlGaN-based deep ultraviolet light-emitting diodes as a hole reserving layer and relieved the strain between the last quantum barrier and the AlGaN electron blocking layer. The simulation shows that the light output power and internal quantum efficiency of the newly structure are ...
Shanlin Wang +4 more
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Impact of AlGaN on luminescence capability of rare-earth ions in AlGaN
Optical Materials, 2006Abstract Effects of AlN molar fraction on the luminescence properties of rare-earth elements (RE) impurities of Eu and Tb in Al x Ga 1− x N ( x = 0–1) have been investigated using cathodoluminescence and time-resolved photoluminescence. Rutherford backscattering and extended X-ray absorption fine-structure analysis reveal that the implanted Eu ...
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Fabrication of AlGaN/GaN/AlGaN Double Heterostructure HEMT on Diamond
ECS Meeting Abstracts, 2011Abstract not Available.
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Donors, Acceptors, and Traps in AlGaN and AlGaN/GaN Epitaxial Layers
2006Abstract : The Wood-Witt program was organized in 1999, and has involved more than fifty participants, from more than ten different countries. The present grant, F49620-03-1-0197, has covered the period 1 May 03 - 30 Apr 06. The overall goal has been to understand defects and impurities in GaN, and determine how to reduce them, if possible.
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2017
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