Results 151 to 160 of about 24,368 (233)

Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]

Adv Sci (Weinh)
Liu F, Xue J, Wu G, Yuan J, Yao J, Liu R, Guo Z, Li Z, Hu H, Sun W, Zhao C, Zhang C, Liu X, Zhang K, Zhang J, Hao Y.   +15 more
europepmc   +1 more source

Effect of temperature on 2D terahertz plasmons in AlGaN/GaN heterostructures. [PDF]

Sci Rep
Dub M, Sai P, Yavorskiy D, Ivonyak Y, Seweryn A, Godlewski M, Prystawko P, Kucharski R, Cywiński G, Knap W, Rumyantsev S.   +10 more
europepmc   +1 more source

Extreme-Temperature (1000 °C) Operation of InGaN/AlGaN Nanowire Light-Emitting Diodes. [PDF]

ACS Photonics
Muthu MBS, Emu IH, Velpula RT, Nguyen HPT.   +3 more
europepmc   +1 more source

Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]

ACS Omega
Qureshi B, Alharbi AG, Ayub R, Loan SA.
europepmc   +1 more source

Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation. [PDF]

Light Sci Appl
Wang L, Gong S, Xia C, Liu D, Cong X, Zhu A, Zeng H, Lan F, Yang Z, Otsuji T, Zhang Y.   +10 more
europepmc   +1 more source

Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]

Micromachines (Basel)
Won YH, Kim TS, Lee JH, Lim CY, Min BG, Kang DM, Kim HS.   +6 more
europepmc   +1 more source

Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]

ACS Omega
Tan WH, Zhao H, Farizuan M, Firdaus A, Kawarada H, Tao T, Falina S, Syamsul M.   +7 more
europepmc   +1 more source

Structure-Dependent Parameter Trade-Off Optimization on <i>R</i>_on<i>C</i>_off and Power Compression of AlGaN/GaN HEMTs for RF Switch Application. [PDF]

Micromachines (Basel)
Zou X, Zhang M, Yang L, Hou B, Wu M, Yi C, Lu H, Jia M, Yu Q, Jiang Y, Ma X, Hao Y.   +11 more
europepmc   +1 more source

Materials challenges in solid-state sensors for continuous monitoring of ions in water. [PDF]

Beilstein J Nanotechnol
Darestani-Farahani M, Kruse P.
europepmc   +1 more source

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]

ACS Omega
Omar A, Loan SA.
europepmc   +1 more source