Results 171 to 180 of about 24,368 (233)

Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor. [PDF]

Micromachines (Basel)
Cheng Q, Yang M, Gao Z, Wang R, He J, Yan F, Tang X, Zhang W, Hu Z, Mu J.   +9 more
europepmc   +1 more source

Infrared Near-Field Spectroscopy of AlGaN/GaN Heterostructures for Probing Two-Dimensional Electron Gas. [PDF]

ACS Appl Mater Interfaces
Bisignano I, Imura M, Tanjaya NK, Ye MJ, Okada N, Ishii S.   +5 more
europepmc   +1 more source

Effects of Switching on the 2-DEG Channel in Commercial E-Mode GaN-on-Si HEMT. [PDF]

Micromachines (Basel)
Baca-Arroyo R.
europepmc   +1 more source

Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission. [PDF]

Light Sci Appl
Chu C, Jiang Y, He C, Li W, Tian K, Zhang Y, Sun X, Zhang ZH.   +7 more
europepmc   +1 more source

Localized Electric Field Tailoring to Balance Voltage Reliability, Current Density, and High-Frequency Performance of AlGaN/GaN HEMTs. [PDF]

Micromachines (Basel)
Wang Y, Wang J, Dong Z, Tian P, Liu Y, Zhai J, Hu W.   +6 more
europepmc   +1 more source

Fowler-Nordheim Tunneling in AlGaN MIS Heterostructures with Atomically Thin <i>h</i>-BN Layer Dependence and Performance Limits. [PDF]

Nanomaterials (Basel)
Zhang J, Li Y, Luo S, Zhang Y, Luo M, Wang H, Yu C.   +6 more
europepmc   +1 more source

Design and Application of p-AlGaN Short Period Superlattice. [PDF]

Micromachines (Basel)
Liu Y, Chen C, Zhou X, Li P, Yang B, Zhang Y, Bai J.   +6 more
europepmc   +1 more source

Photoelectrochemical Oxidation and Etching Methods Used in Fabrication of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors and Integrated Circuits: A Review. [PDF]

Micromachines (Basel)
Lee CT, Lee HY.
europepmc   +1 more source

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AlGaN Nanocolumns and AlGaN/GaN/AlGaN Nanostructures Grown by Molecular Beam Epitaxy

physica status solidi (b), 2002
This work reports on the characterization of hexagonal, single crystal AlGaN nanocolumns with diameters in the range of 30 to 100 nm grown by molecular beam epitaxy on Si(111) substrates. The change of the flux ratio between the Al and the total III-element controls the alloy composition.
J. Risti?, M.A. S�nchez-Garc�a, J.M. Ulloa, E. Calleja, J. Sanchez-P�ramo, J.M. Calleja, U. Jahn, A. Trampert, K.H. Ploog   +8 more
openaire   +1 more source

Deep Ultraviolet AlGaN-Based Light-Emitting Diodes with p-AlGaN/AlGaN Superlattice Hole Injection Structures [PDF]

Processes, 2021
The p-AlGaN/AlGaN superlattice (SL) hole injection structure was introduced into deep ultraviolet (DUV) light-emitting diodes (LEDs) to enhance their performances. The period thicknesses of the p-Al0.8Ga0.2N/Al0.48Ga0.52N SLs affected the performances of the DUV LEDs.
Jinn-Kong Sheu, Sheng-Po Chang, Wei-Chih Lai   +2 more
exaly   +2 more sources