Results 171 to 180 of about 26,376 (228)
Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]
ACS OmegaOmar A, Loan SA.
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AlGaN Nanocolumns and AlGaN/GaN/AlGaN Nanostructures Grown by Molecular Beam Epitaxy
physica status solidi (b), 2002This work reports on the characterization of hexagonal, single crystal AlGaN nanocolumns with diameters in the range of 30 to 100 nm grown by molecular beam epitaxy on Si(111) substrates. The change of the flux ratio between the Al and the total III-element controls the alloy composition.
J. Risti? +8 more
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AlGaN/GaN/AlGaN ultraviolet photodetectors on Si
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 2005AlGaN/GaN/AlGaN ultraviolet photodetectors were grown on Si [111] substrates using an AlN buffer by metalorganic chemical vapor deposition. These detectors showed a high response in a narrow range of wavelength with a peak position at 365 nm. A peak responsivity of 24 A/W was obtained at 5.5 V bias.
R.L. Jiang +6 more
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High-reflectivity ultraviolet AlGaN∕AlGaN distributed Bragg reflectors
Applied Physics Letters, 2006We demonstrate high-reflectivity crack-free Al0.18Ga0.82N∕Al0.8Ga0.2N distributed Bragg reflectors (DBR) for the spectral region around 350nm grown by molecular-beam epitaxy on thick GaN templates. The structural quality of the DBR layers is maintained by compensating the compressive and tensile stress in each λ∕4 pair.
Mitrofanov, Oleg +6 more
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High Breakdown Voltage in AlGaN/GaN HEMTs Using AlGaN/GaN/AlGaN Quantum-Well Electron-Blocking Layers [PDF]
Nanoscale Research Letters, 2014 In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a ...
Ya-Ju Lee, Chun-Ying Huang, Yung-Chi Yao
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AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
Applied Physics Letters, 1999A single temperature process using AlGaN nucleation layers has been developed that produces device-quality, GaN-based materials with bilayer step surfaces. The AlGaN nucleation layer is deposited by flow modulation organometallic vapor phase epitaxy at temperatures in excess of 1000 °C, where GaN and AlGaN films can be subsequently grown.
Smart, Joseph A. +5 more
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Journal of Crystal Growth, 2013
Abstract High electron mobility transistors (HEMTs) structures with GaN, Al0.025Ga0.975N and Al0.04Ga0.96N high resistivity (HR) buffers were grown on sapphire by metal organic chemical vapor deposition (MOCVD). The structural and electrical properties of these three samples were investigated and compared. By increasing Al composition of AlGaN buffer,
Enchao Peng +9 more
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Abstract High electron mobility transistors (HEMTs) structures with GaN, Al0.025Ga0.975N and Al0.04Ga0.96N high resistivity (HR) buffers were grown on sapphire by metal organic chemical vapor deposition (MOCVD). The structural and electrical properties of these three samples were investigated and compared. By increasing Al composition of AlGaN buffer,
Enchao Peng +9 more
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Optical characterization of AlGaN-GaN-AlGaN quantum wells
Journal of Electronic Materials, 1992High quality AL x Ga1−x N-GaN-Al x Ga1−x N quantum wells of different thicknesses andx values were grown by low pressure metalorganic chemical vapor deposition (LPMOCVD).
S. Krishnankutty +5 more
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