Results 191 to 200 of about 24,368 (233)

Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

physica status solidi (b), 2007
AbstractTwo‐dimensional electron gas transport in AlN/GaN and AlGaN/GaN heterostructures has been investigated employing geometrical magnetoresistance measurements and quantitative mobility‐spectrum analysis. The channel magnetoresistance of ungated four‐terminal test structures, with an effective width to length ratio of 10, was measured using pulsed ...
G. A. Umana‐Membreno, G. Parish, B. D. Nener, D. Buttari, S. Keller, U. K. Mishra   +5 more
openaire   +1 more source

Advantages of deep-UV AlGaN light-emitting diodes with an AlGaN/AlGaN superlattices electron blocking layer

Applied Physics A, 2015
In this work, the AlGaN/AlGaN superlattices (SLs) electron blocking layer (EBL) is designed to replace conventional AlGaN EBL in the AlGaN-based deep-UV light-emitting diodes (DUV-LEDs). The simulation results show that the DUV-LEDs with SLs possess higher emission power and internal quantum efficiency as compared to those with conventional EBL, which ...
Yi An Yin, Naiyin Wang, Shuti Li, Yong Zhang, Guanghan Fan   +4 more
openaire   +1 more source

Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate

Superlattices and Microstructures, 2018
Abstract A short channel AlGaN/GaN HEMT with AlGaN/InGaN/AlGaN quantum well plate is proposed and investigated. Benefited by the 2DEG confining effect and plated-like function, the QWP-HEMT exhibits weaker short channel effects and stronger reverse blocking, where in maximum the DIBL reduction and the critical electric field improvement are 88.9% and
Zeheng Wang, Jun Cao, Ruize Sun, Fangzhou Wang, Yuanzhe Yao   +4 more
openaire   +1 more source

Investigation of the inserted LT-AlGaN interlayer in AlGaN/GaN/AlGaN DH-FET strucutre on Si substrates

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 2014
A novel AlGaN/GaN/AlGaN double-heterostructure field effect transistor (DH-FET) structure with an inserted LT-AlGaN interlayer grown on 150 mm Si substrate has been studied. The DH-FET structure has been characterized by transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD).
Yu-Lin Hsiao, Chia-Ao Chang, Edward Yi Chang   +2 more
openaire   +1 more source

Growth and characterization of AlGaN/GaN/AlGaN field effect transistors

physica status solidi c, 2010
AbstractField effect transistors (FETs) on both GaN and AlGaN buffers were grown and compared. Development of high quality AlGaN is the key to obtain high performance AlGaN buffer FETs. An optimized Al0.04Ga0.96N layer on SiC substrate had (002) and (201) X‐ray rocking curves with full wide at half maximum (FWHM) of 140 and 450 arc sec, respectively ...
Z. Chen, Y. Pei, R. Chu, S. Newman, D. Brown, R. Chung, S. Keller, S. P. DenBaars, S. Nakamura, U. K. Mishra   +9 more
openaire   +1 more source

Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs

Journal of Crystal Growth, 2004
For nitride heterojunction field-effect transistors, the heterojunction forming the electron barrier has to be designed based on trade-offs between lattice mismatch, two-dimensional electron gas concentration, and alloy scattering. In this work, we study the use of a superlattice-based barrier which effectively increases the heterojunction barrier ...
Uttiya Chowdhury, Raymond K. Price, Michael M. Wong, Dongwon Yoo, Xuebing Zhang, Milton Feng, Russell D. Dupuis   +6 more
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Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures

Journal of Applied Physics, 2001
The pseudodielectric function spectra 〈ε〉 of wurtzite GaN, AlGaN, and GaN/AlGaN heterostructures were determined for photon energies ranging from 2 to 5 eV, using variable angle spectroscopic ellipsometry (SE). Samples were grown by low-pressure metalorganic chemical vapor deposition on c-plane sapphire substrates.
J. Wagner, H. Obloh, M. Kunzer, M. Maier, K. Köhler, B. Johs   +5 more
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Photocurrent Properties of the AlGaN/GaN/AlGaN Multilayer Structure on Si

Chinese Physics Letters, 2001
Al0.2Ga0.8N/GaN/Al0.2Ga0.8N multilayer structures and GaN monolayer structures with AlN as the buffer layers were grown on Si substrates by metal-organic chemical vapour deposition. The photocurrent responses of these structures were measured and analysed. The multilayer structures showed a high response in a narrow range of wavelengths.
Jiang Ruo-Lian, Zhao Zuo-Ming, Chen Pen, Xi Dong-Juan, Shen Bo, Zhang Rong, Zheng You-Dou   +6 more
openaire   +1 more source

Surface control of AlGaN for the stability improvement of AlGaN/GaN HEMTs

2008 Device Research Conference, 2008
Highly stable and reliable operation is absolutely required for GaN-based high-efficiency power switching devices and high-power RF AlGaN/GaN HEMTs. For the improvement of operation stability in such devices, in this paper, the surface control technologies will be addressed by introducing an ultrathin-Al-layer process and a multi-mesa-channel structure
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Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

Journal of Crystal Growth, 2001
Abstract We have studied the effect of a low-temperature-deposited (LT-) AlGaN interlayer on AlGaN/GaN heterostructure. High-crystalline-quality and crack-free AlGaN layers covering the entire compositional range were realized using the LT-AlN interlayer.
Satoshi Kamiyama, Motoaki Iwaya, Nobuaki Hayashi, Tetsuya Takeuchi, Hiroshi Amano, Isamu Akasaki, Satoshi Watanabe, Yawara Kaneko, Norihide Yamada   +8 more
openaire   +1 more source