Results 191 to 200 of about 26,376 (228)
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Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs
Journal of Crystal Growth, 2004For nitride heterojunction field-effect transistors, the heterojunction forming the electron barrier has to be designed based on trade-offs between lattice mismatch, two-dimensional electron gas concentration, and alloy scattering. In this work, we study the use of a superlattice-based barrier which effectively increases the heterojunction barrier ...
Uttiya Chowdhury +6 more
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Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures
Journal of Applied Physics, 2001The pseudodielectric function spectra 〈ε〉 of wurtzite GaN, AlGaN, and GaN/AlGaN heterostructures were determined for photon energies ranging from 2 to 5 eV, using variable angle spectroscopic ellipsometry (SE). Samples were grown by low-pressure metalorganic chemical vapor deposition on c-plane sapphire substrates.
J. Wagner +5 more
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Surface control of AlGaN for the stability improvement of AlGaN/GaN HEMTs
2008 Device Research Conference, 2008Highly stable and reliable operation is absolutely required for GaN-based high-efficiency power switching devices and high-power RF AlGaN/GaN HEMTs. For the improvement of operation stability in such devices, in this paper, the surface control technologies will be addressed by introducing an ultrathin-Al-layer process and a multi-mesa-channel structure
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Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure
Journal of Crystal Growth, 2001Abstract We have studied the effect of a low-temperature-deposited (LT-) AlGaN interlayer on AlGaN/GaN heterostructure. High-crystalline-quality and crack-free AlGaN layers covering the entire compositional range were realized using the LT-AlN interlayer.
Satoshi Kamiyama +8 more
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Fabrication of AlGaN/GaN/AlGaN Double Heterostructure HEMT on Diamond
ECS Meeting Abstracts, 2011Abstract not Available.
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Donors, Acceptors, and Traps in AlGaN and AlGaN/GaN Epitaxial Layers
2006Abstract : The Wood-Witt program was organized in 1999, and has involved more than fifty participants, from more than ten different countries. The present grant, F49620-03-1-0197, has covered the period 1 May 03 - 30 Apr 06. The overall goal has been to understand defects and impurities in GaN, and determine how to reduce them, if possible.
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Impact of AlGaN on luminescence capability of rare-earth ions in AlGaN
Optical Materials, 2006Abstract Effects of AlN molar fraction on the luminescence properties of rare-earth elements (RE) impurities of Eu and Tb in Al x Ga 1− x N ( x = 0–1) have been investigated using cathodoluminescence and time-resolved photoluminescence. Rutherford backscattering and extended X-ray absorption fine-structure analysis reveal that the implanted Eu ...
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2017
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