Results 181 to 190 of about 26,376 (228)

Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells

Applied Physics Letters, 1990
AlxGa1−xN-GaN quantum wells were grown on basal plane sapphire by low-pressure metalorganic vapor deposition. The photoluminescence spectra of samples of different well thicknesses and x values were measured. The experimental data were compared with the calculated solutions of the finite square quantum well and the bound states involved in the optical ...
M. A. Khan, R. A. Skogman, J. M. Van Hove, S. Krishnankutty, R. M. Kolbas   +4 more
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Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

Journal of Alloys and Compounds, 2013
Abstract This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better ...
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang   +9 more
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Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate

Applied Physics Express, 2014
A low-temperature (LT) AlGaN interlayer is inserted in the Al0.1Ga0.9N back barrier layer of an Al0.2Ga0.8N/GaN/Al0.1Ga0.9N double heterostructure grown on a 150 mm Si substrate. It is found that the 21-nm-thick LT-AlGaN interlayer plays an important role in stress relaxation and dislocation reduction of the Al0.1Ga0.9N back barrier layer, especially ...
Yu-Lin Hsiao, Yi-Jie Wang, Chia-Ao Chang, You-Chen Weng, Yen-Yu Chen, Kai-Wei Chen, Jer-Shen Maa, Edward Yi Chang   +7 more
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Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

physica status solidi (b), 2007
AbstractTwo‐dimensional electron gas transport in AlN/GaN and AlGaN/GaN heterostructures has been investigated employing geometrical magnetoresistance measurements and quantitative mobility‐spectrum analysis. The channel magnetoresistance of ungated four‐terminal test structures, with an effective width to length ratio of 10, was measured using pulsed ...
G. A. Umana‐Membreno, G. Parish, B. D. Nener, D. Buttari, S. Keller, U. K. Mishra   +5 more
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Polarized Photoluminescence Study on AlGaN of AlGaN/GaN Heterostructure

MRS Proceedings, 2005
AbstractOptical properties of tensile strained AlxGa1-xN films of AlxGa1-xN/GaN heterostructures grown on sapphire were investigated by using polarization-resolved photoluminescence spectroscopy. Emissions from AlxGa1-xN with polarization of E//c and E⊥c were obtained at different peak energies.
Sachio Kitagawa, Kenichi kosaka, Tadayoshi Tuchiya, Akira Suzuki, Tsutomu Araki, Yasushi Nanishi   +5 more
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Advantages of deep-UV AlGaN light-emitting diodes with an AlGaN/AlGaN superlattices electron blocking layer

Applied Physics A, 2015
In this work, the AlGaN/AlGaN superlattices (SLs) electron blocking layer (EBL) is designed to replace conventional AlGaN EBL in the AlGaN-based deep-UV light-emitting diodes (DUV-LEDs). The simulation results show that the DUV-LEDs with SLs possess higher emission power and internal quantum efficiency as compared to those with conventional EBL, which ...
Yi An Yin, Naiyin Wang, Shuti Li, Yong Zhang, Guanghan Fan   +4 more
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Investigation of the inserted LT-AlGaN interlayer in AlGaN/GaN/AlGaN DH-FET strucutre on Si substrates

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 2014
A novel AlGaN/GaN/AlGaN double-heterostructure field effect transistor (DH-FET) structure with an inserted LT-AlGaN interlayer grown on 150 mm Si substrate has been studied. The DH-FET structure has been characterized by transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD).
Yu-Lin Hsiao, Chia-Ao Chang, Edward Yi Chang   +2 more
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Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate

Superlattices and Microstructures, 2018
Abstract A short channel AlGaN/GaN HEMT with AlGaN/InGaN/AlGaN quantum well plate is proposed and investigated. Benefited by the 2DEG confining effect and plated-like function, the QWP-HEMT exhibits weaker short channel effects and stronger reverse blocking, where in maximum the DIBL reduction and the critical electric field improvement are 88.9% and
Zeheng Wang, Jun Cao, Ruize Sun, Fangzhou Wang, Yuanzhe Yao   +4 more
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Photocurrent Properties of the AlGaN/GaN/AlGaN Multilayer Structure on Si

Chinese Physics Letters, 2001
Al0.2Ga0.8N/GaN/Al0.2Ga0.8N multilayer structures and GaN monolayer structures with AlN as the buffer layers were grown on Si substrates by metal-organic chemical vapour deposition. The photocurrent responses of these structures were measured and analysed. The multilayer structures showed a high response in a narrow range of wavelengths.
Jiang Ruo-Lian, Zhao Zuo-Ming, Chen Pen, Xi Dong-Juan, Shen Bo, Zhang Rong, Zheng You-Dou   +6 more
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Growth and characterization of AlGaN/GaN/AlGaN field effect transistors

physica status solidi c, 2010
AbstractField effect transistors (FETs) on both GaN and AlGaN buffers were grown and compared. Development of high quality AlGaN is the key to obtain high performance AlGaN buffer FETs. An optimized Al0.04Ga0.96N layer on SiC substrate had (002) and (201) X‐ray rocking curves with full wide at half maximum (FWHM) of 140 and 450 arc sec, respectively ...
Z. Chen, Y. Pei, R. Chu, S. Newman, D. Brown, R. Chung, S. Keller, S. P. DenBaars, S. Nakamura, U. K. Mishra   +9 more
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