Results 161 to 170 of about 24,368 (233)

Thermionic emission conduction in Mo AlGaN/GaN diodes in the presence of Schottky barrier inhomogeneities. [PDF]

Sci Rep
Milazzo S, Greco G, Mirabella S, Iucolano F, Roccaforte F.   +4 more
europepmc   +1 more source

III-Nitrides empower miniaturized spectral imager in ultraviolet. [PDF]

Light Sci Appl
Zhao Y, Li T, Ooi B.
europepmc   +1 more source

III-Nitride MEMS drum resonators on flexible metal substrates. [PDF]

Microsyst Nanoeng
Kassem A, Gujrati R, Bourrier D, Ayela C, Mathieu F, Dufour I, Nicu L, Ottapilakkal V, Vuong P, Sundaram S, Hunt W, Ougazzaden A, Leichlé T, Salvestrini JP.   +13 more
europepmc   +1 more source

Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. [PDF]

Micromachines (Basel)
Ham G, Shin E, Yoon S, Yang J, Choi Y, Lim G, Kim K.   +6 more
europepmc   +1 more source

p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications. [PDF]

Sci Rep
Kumar M, Labau T, Xu L, Zgheib J, Escoffier R, Buckley J.   +5 more
europepmc   +1 more source

Predictive value of pan-immune-inflammation value and ultrasonographic parameters in cervical lymphadenopathy: development of a novel clinical scoring system. [PDF]

Eur Arch Otorhinolaryngol
Aslan M, Algan B.
europepmc   +1 more source

Enhanced Efficiency and Reliability of AlGaN UVC-LED with Tapered Hole Injection Layer. [PDF]

Micromachines (Basel)
Xu L, Peng Y, Wu F, Guo W, Dai J, Chen C.   +5 more
europepmc   +1 more source

4.11 A/1650 V Sapphire-Substrate GaN MIS-HEMTs with Thin Buffer for Medium-Voltage Power Applications. [PDF]

Micromachines (Basel)
Chen C, Liu Y, Zhou X, Li P, Zhang Y, Yang B, Yang Z, Bai J.   +7 more
europepmc   +1 more source

Influence of LPCVD-Si₃N₄ Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel)
Jiang G, Li W, Luo X, Liu Y, Fu C, Zhang Q, Zhang G, Lin Z, Cui P.   +8 more
europepmc   +1 more source

Recent Advances in Diamond-Capped GaN HEMTs for RF Application. [PDF]

Nanomaterials (Basel)
Xiang Y, Wu M, Sun H, Li S, Chen H, Wei J, Yan B, Yang L, Zhang M, Lu H, Hou B, Ma X, Hao Y.   +12 more
europepmc   +1 more source