Decoupled Multiplicative Physics-Guided Neural Network for Extrapolative Modeling of GaN HEMT. [PDF]
Tang Y +5 more
europepmc +1 more source
Atomically confined insertion for 2D strain and polarization engineered GaN electronics. [PDF]
Shi Y +13 more
europepmc +1 more source
Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]
Qureshi B, Alharbi AG, Ayub R, Loan SA.
europepmc +1 more source
<i>V</i><sub>TH</sub>-Adjustable p-Channel GaN Field-Effect Transistor with an Inserted n-GaN Layer. [PDF]
Liu Y +10 more
europepmc +1 more source
Extreme-Temperature (1000 °C) Operation of InGaN/AlGaN Nanowire Light-Emitting Diodes. [PDF]
Muthu MBS +3 more
europepmc +1 more source
Effect of temperature on 2D terahertz plasmons in AlGaN/GaN heterostructures. [PDF]
Dub M +10 more
europepmc +1 more source
Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]
Won YH +6 more
europepmc +1 more source
Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation. [PDF]
Wang L +10 more
europepmc +1 more source
Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]
Tan WH +7 more
europepmc +1 more source
Structure-Dependent Parameter Trade-Off Optimization on <i>R</i><sub>on</sub><i>C</i><sub>off</sub> and Power Compression of AlGaN/GaN HEMTs for RF Switch Application. [PDF]
Zou X +11 more
europepmc +1 more source

