Results 131 to 140 of about 26,376 (228)

Weak polarization electric field Ⅲ-N LEDs on polar plane with enhanced efficiency and strong lateral carrier confinement. [PDF]

Light Sci Appl
Zhao J, Zuo C, Zhang L, Gao H, Liu Y, Deng G, Li X, Zhang Y.   +7 more
europepmc   +1 more source

The Influence of Gap Angle on the Transport Characteristics of Split-Gate AlGaN/GaN Heterostructure Field-Effect Transistors. [PDF]

Micromachines (Basel)
Kang Y, Zhang X, Jiang G, Fu C, Hou Z, Zhang G, Luan C, Liu Y.   +7 more
europepmc   +1 more source

Two-Dimensional Materials for Wide-Bandgap and Ultrawide-Bandgap Semiconductor Integration: Epitaxy, Interfaces, and Optoelectronic Devices. [PDF]

Micromachines (Basel)
Hong X, Xue Z, Jia M, Bu T, Duan X.
europepmc   +1 more source

Temperature and Bias Dependence of the DC and RF Characteristics of a 150 nm AlGaN/GaN-on-SiC HEMT for Microwave Applications. [PDF]

Micromachines (Basel)
Alim MA, Gaquiere C.
europepmc   +1 more source

Monolithically integrating polarization-doped InGaN p-FET and GaN n-FET for complementary logic circuitry. [PDF]

Sci Adv
Yu J, Li T, Lao Y, Yang J, Cui J, Liu S, Yang H, Yin Y, Wang M, Yang X, Chen KJ, Shen B, Wei J.   +12 more
europepmc   +1 more source

Polar Wurtzite NbAlN: A Transition-Metal Nitride Alloy for Polarization-Engineered GaN Heterostructures. [PDF]

Adv Mater
Kobayashi A, Kurogi S, Okuda T, Kikuchi R, Wakamoto Y, Kubota K, Sasaki H, Ikeda K, Shojiki K, Kawamura T, Akiyama T, Seki T, Maeda T.   +12 more
europepmc   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

Suppression of Interface Traps and Improved Breakdown in Recessed-Gate AlGaN/GaN MISHEMTs Using Low-Temperature Nitrogen Passivation. [PDF]

ACS Omega
Chen HC, Liu AC, Lin CH, Chou SY, Chang TC, Kao TS, Kuo HC.   +6 more
europepmc   +1 more source

Pixel level anomaly detection in second harmonic generation microscopy for non destructive defect inspection of AlGaN/GaN heterostructures. [PDF]

Discov Nano
Kang CF, Hung CC, Huang CH, Li TC, Uen WY, Chiu CH.   +5 more
europepmc   +1 more source