Results 91 to 100 of about 26,376 (228)
Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices
, 2006 Mg-doped AlGaN and GaN/AlGaN superlattice are grown by metalorganic chemical vapour deposition (MOCVD). Rapid thermal annealing (RTA) treatments are carried out on the samples.
Wang XL (Wang Xiao-Liang) +11 more
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Incorporation of oxygen donors in AlGaN
, 2018 The chemistry of oxygen atoms at the surface of an AlGaN layer for Al0.35Ga0.65N/GaN heterostructures was investigated by scanning photoemission microscopy (SPEM) using synchrotron radiation.
Lee, JL +4 more
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High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains
IEEE Journal of the Electron Devices Society, 2018 In this paper, a high breakdown voltage of more than 2200 V in high-electron-mobility transistors (HEMTs) with AlGaN channel and a novel ohmic/Schottky-hybrid drain contact is achieved, which is the record breakdown voltage ever achieved on AlGaN-channel
Weihang Zhang +4 more
doaj +1 more source
Nanomaterials, 2018 In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HVPE).
Chi-Tsung Tasi +5 more
doaj +1 more source
Определение времени окончания плазмохимического травления слоев p-GaN и AlGaN в гетероструктурах типа p-GaN/AlGaN/GaN с двумерным электронным газом с использованием лазерной интерферометрии [PDF]
, 2022 Методом лазерной интерферометрии и сканирующей электронной микроскопии установлены закономерности изменения во времени интенсивности отраженного сигнала, регистрируемого детектором лазерного интерферометра с рабочей частотой 670 нм, в процессе ...
Юник, А. Д. +2 more
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Ayla Algan ile sözlü tarih görüşmesi
, 2016 Bu görüşme, Genç Hayat Vakfı tarafından, Sokağımdan Tarih Yazıyorum başlığı altında gerçekleştirilmiştir. Görüşmeler, İstanbul'un, Beyoğlu, Fatih, Eyüp, Kağıthane, Şişli, Maltepe, Üsküdar, Tuzla, Beykoz ve Sarıyer ilçelerinde yaşayan ve bu ilçelerdeki ...
Algan, Ayla
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TCAD simulation and modeling of AlGaN/GaN HFETs
, 2009 This work focused on the TCAD simulation and modeling of AlGaN/GaN HFETs. AlGaN/GaN HFETs have demonstrated excellent RF performance, which benefits from the high sheet charge density in these hetero-structures, the high carrier mobility and saturation ...
Kuang, Weiwei
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, 2007 Using the measured capacitance- voltage curves of Ni Schottky contacts with different areas on strained AlGaN/ GaN heterostructures and the current- voltage characteristics for the AlGaN/ GaN heterostructure field- effect transistors at low drain- source
Zhao, J, Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China. 电子邮箱地址: linzj@sdu.edu.cn +6 more
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The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface
NanomaterialsAlGaN/GaN high-electron-mobility transistors (HEMTs) are widely used in high-frequency and high-power applications owing to the high two-dimensional electron gas (2DEG) concentration. However, the microscopic origin of the 2DEG remains unclear.
Ying Ma +12 more
doaj +1 more source
, 2012 研究了金属有机化合物化学气相沉积(MOCVD)系统外延高Al组分较厚AlGaN薄膜材料的生长技术。实验发现,AlGaN/GaN结构中的AlGaN材料的相分离现象可能是由于过低的生长V/III以及材料所受的张应力状态所致,而V/III过高时则会出现Al源的并入效率饱和。采用AlN过渡层技术,外延生长了表面无裂纹的45%Al组分较厚(100～200nm)AlGaN薄膜材料。所得材料的Al组分与气相Al组分相同,(0002)面X射线衍射(XRD)双晶摇摆曲线半高宽(FWHM)为376arcsec ...
韩军 +6 more
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