SIMS Investigation of Al Diffusion Across Interfaces in AlGaN/GaN and AlN/GaN Heterostructures. [PDF]
Laifi J, Hasaneen MF, Bchetnia A.
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Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal. [PDF]
Pan J +8 more
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Auger Electron Spectroscopy for Chemical Analysis of Passivated (Al,Ga)N-Based Systems. [PDF]
Domanowska A, Adamowicz B.
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Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]
Weis M.
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Investigation of III-Nitride MEMS Pressure Sensor for High-Temperature Applications. [PDF]
Prio MH +6 more
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Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]
Liu F +15 more
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Design and Optimization of AlGaN/AlN/GaN L‑SBD for Radiofrequency Applications. [PDF]
Dudekula S +5 more
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Extreme-Temperature (1000 °C) Operation of InGaN/AlGaN Nanowire Light-Emitting Diodes. [PDF]
Muthu MBS +3 more
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Effect of temperature on 2D terahertz plasmons in AlGaN/GaN heterostructures. [PDF]
Dub M +10 more
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Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]
Qureshi B, Alharbi AG, Ayub R, Loan SA.
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