Results 91 to 100 of about 24,368 (233)

Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer

Advanced Photonics Research
The AlGaN materials system has been extensively studied in order to improve the efficiency of UV‐B and UV‐C light‐emitting diodes (LEDs). While progress has been made, significant challenges remain at shorter wavelengths.
Andre Perepeliuc, Rajat Gujrati, Phuong Vuong, Vishnu Ottapilakkal, Thi May Tran, Mohamed Bouras, Ali Kassem, Ashutosh Srivastava, Tarik Moudakir, Gilles Patriarche, Paul Voss, Suresh Sundaram, Jean Paul Salvestrini, Abdallah Ougazzaden   +13 more
doaj   +1 more source

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

AIP Advances, 2016
In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance (ΔC) with different pulse height, the gate pulse ...
Bin Dong, Jie Lin, Ning Wang, Ling-li Jiang, Zong-dai Liu, Xiaoyan Hu, Kai Cheng, Hong-yu Yu   +7 more
doaj   +1 more source

Device Simulation of Hole Transport in 233 nm Multiquantum Well AlGaN‐Based UV LED

physica status solidi (a), Volume 223, Issue 17, 9 September 2026.
Deep‐UV LEDs suffer from low hole injection efficiency. In this work, electro optical simulations of AlGaN DUV LEDs with 6, 12, and 21 quantum wells, emitting at 233 nm, reveal efficient inter‐well hole transport within the active multiple quantum well region. The data are consistent with experimental findings.
Ibrahim Marouf, Friedhard Römer, Marcel Schilling, Franz Biebler, Jakob Höpfner, Massimo Grigoletto, Tim Wernicke, Michael Kneissl, Bernd Witzigmann   +8 more
wiley   +1 more source

Pulsed operation and performance of commercial GaN HEMTs [PDF]

, 2009
The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The gain and power variations at pulse repetition frequencies (PRFs) in the range 100–400 kHz are presented.
Morris, KA, Beach, MA, Fornetti, F
core  

Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer

, 2011
With an n-AlGaN(4 nm)/GaN(4 nm) superlattice(SL) inserted between an n-GaN and an InGaN/GaN multiquantum well active layer, the efficiency droop of GaN-based LEDs has been improved.
Liu, Zhe, Hongxi Lu, Li, Jinmin, Zhe Liu, Junxi Wang, Ji, P.(jipanfeng@semi.ac.cn), Jinmin Li, Lu, Hongxi, Tongbo Wei, Wei, Tongbo, Ji, Panfeng, Wang, Junxi, Liu, Naixin, Panfeng Ji, Naixin Liu   +14 more
core   +1 more source

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

Nanomaterials, 2018
In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HVPE).
Chi-Tsung Tasi, Wei-Kai Wang, Sin-Liang Ou, Shih-Yung Huang, Ray-Hua Horng, Dong-Sing Wuu   +5 more
doaj   +1 more source

Influence of the Epitaxial Growth Conditions of the Active Region on the Performance of Far‐Ultraviolet‐C Light‐Emitting Diodes

physica status solidi (a), Volume 223, Issue 17, 9 September 2026.
Far‐ultraviolet‐C light‐emitting diodes emitting at emission wavelengths of 226 or 233 nm with active regions epitaxially grown under different conditions are compared regarding their emission power, operation voltage, and lifetime. Based on these optimizations, 226 nm LEDs with an L70 lifetime larger than 250 h and an initial emission power of more ...
Tim Kolbe, Sylvia Hagedorn, Jens Rass, Hyun Kyong Cho, Jan Ruschel, Sven Einfeldt, Markus Weyers   +6 more
wiley   +1 more source

AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S

, 2008
We investigated AlGaN layers grown by metalorganic chemical vapor deposition (MOCVD) on high temperature (HT-)GaN and AlGaN buffer layers. On GaN buffer layer, there are a lot of surface cracking because of tensile strain in subsequent AlGaN epilayers ...
Yan, JC, Ma, P, Wang, JX, Liu, Z, Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China., Li, JM, Liu, NX   +6 more
core  

High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains

IEEE Journal of the Electron Devices Society, 2018
In this paper, a high breakdown voltage of more than 2200 V in high-electron-mobility transistors (HEMTs) with AlGaN channel and a novel ohmic/Schottky-hybrid drain contact is achieved, which is the record breakdown voltage ever achieved on AlGaN-channel
Weihang Zhang, Jincheng Zhang, Ming Xiao, Li Zhang, Yue Hao   +4 more
doaj   +1 more source

Conceptual colour: race, economic knowledge, and the anthropology of financialization De la couleur comme concept : race, connaissances économiques et anthropologie de la financiarisation

Journal of the Royal Anthropological Institute, Volume 32, Issue 3, Page 769-788, September 2026.
Economic anthropologists now carry out fieldwork in settings for which the ethnographic method was never designed, amongst powerful financial actors who are notoriously difficult to access, and in contexts which transcend geographical boundaries. This has engendered a re‐orientation of anthropology, to consider not only the economic lives of people but
Kimberly Chong
wiley   +1 more source