Results 71 to 80 of about 3,102 (186)

Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer

Advanced Photonics Research
The AlGaN materials system has been extensively studied in order to improve the efficiency of UV‐B and UV‐C light‐emitting diodes (LEDs). While progress has been made, significant challenges remain at shorter wavelengths.
Andre Perepeliuc, Rajat Gujrati, Phuong Vuong, Vishnu Ottapilakkal, Thi May Tran, Mohamed Bouras, Ali Kassem, Ashutosh Srivastava, Tarik Moudakir, Gilles Patriarche, Paul Voss, Suresh Sundaram, Jean Paul Salvestrini, Abdallah Ougazzaden   +13 more
doaj   +1 more source

High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains

IEEE Journal of the Electron Devices Society, 2018
In this paper, a high breakdown voltage of more than 2200 V in high-electron-mobility transistors (HEMTs) with AlGaN channel and a novel ohmic/Schottky-hybrid drain contact is achieved, which is the record breakdown voltage ever achieved on AlGaN-channel
Weihang Zhang, Jincheng Zhang, Ming Xiao, Li Zhang, Yue Hao   +4 more
doaj   +1 more source

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

Nanomaterials, 2018
In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HVPE).
Chi-Tsung Tasi, Wei-Kai Wang, Sin-Liang Ou, Shih-Yung Huang, Ray-Hua Horng, Dong-Sing Wuu   +5 more
doaj   +1 more source

Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

Advanced Electronic Materials
Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required.
Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Stéphanie Rennesson, Sebastian Tamariz, Maud Nemoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Yvon Cordier, Philippe Ferrandis   +13 more
doaj   +1 more source

The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface

Nanomaterials
AlGaN/GaN high-electron-mobility transistors (HEMTs) are widely used in high-frequency and high-power applications owing to the high two-dimensional electron gas (2DEG) concentration. However, the microscopic origin of the 2DEG remains unclear.
Ying Ma, Lin Shi, Liang Chen, Cai Chen, Yifang Hong, Hua Qin, Xiaodong Zhang, Yi Cui, Hongzhen Lin, Zhiqun Cheng, Fan Zhang, Linfeng Mao, Yong Cai   +12 more
doaj   +1 more source

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

AIP Advances, 2016
The current transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying
Bhishma Pandit, Tae Hoon Seo, Beo Deul Ryu, Jaehee Cho   +3 more
doaj   +1 more source

Measurement of electrostatic fields in Ge-doped AlGaN structures by off-axis electron holography [PDF]

BIO Web of Conferences
Palais Alexis, Cooper David, Monroy Eva, Hyot Bérangère   +3 more
doaj   +1 more source

Women’s Rights and Gender Equality in Turkey| The Politicization of Rape as a Consequence of Western Modernity and Religious Conservatism: Competing Media Narratives on Gender

International Journal of Communication, 2020
Through a feminist critical discourse analysis of newspaper columns from both secular/nationalist and religio-conservative outlets, this article illustrates how the issue of increased violence against women—which was made visible by the murder and ...
Ece Algan
doaj  

European Governance and Democratic Legitimacy of EU Legislation Formation

Journal of Business Administration and Social Studies
The basic of governance approach that is used after the 1990s as a new public administration model is public participation in public policies and government.
Müge Algan
doaj   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source