Results 71 to 80 of about 39,461 (213)

On the quantum and classical scattering times due to charged dislocations in an impure electron gas

, 2002
We derive the ratio of transport and single particle relaxation times in three and two - dimensional electron gases due to scattering from charged dislocations in semiconductors. The results are compared to the respective relaxation times due to randomly
A. Gold, A. Saxler, A.F. Brana, B. Pödör, D. Jena, D. Jena, D.C. Look, Debdeep Jena, E. Frayssinet, J.P. Ibbetson, L. Hsu, O. Ambacher, S. Das Sarma, S. Elhamri, S. Elhamri, Umesh K. Mishra, Z.W. Zheng   +16 more
core   +1 more source

Trust Norms, Distrust, and Worst‐Case Defiance in the COVID‐19 Pandemic

Regulation &Governance, EarlyView.
ABSTRACT When pandemics threaten, governments are expected to protect citizens. Trustworthiness and trust are central to meeting public expectations. Motivational posturing theory differentiates resistant and dismissive defiance during the COVID‐19 pandemic.
Valerie Braithwaite
wiley   +1 more source

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED

Nanoscale Research Letters, 2022
A systematic study was carried out for strain-induced microscale compositional pulling effect on the structural and optical properties of high Al content AlGaN multiple quantum wells (MQWs). Investigations reveal that a large tensile strain is introduced
Shiqiang Lu, Zongyan Luo, Jinchai Li, Wei Lin, Hangyang Chen, Dayi Liu, Duanjun Cai, Kai Huang, Na Gao, Yinghui Zhou, Shuping Li, Junyong Kang   +11 more
doaj   +1 more source

Polarization‐Engineered Barrier Designs and Field Reversal Strategies for Improved Carrier Confinement in N‐Polar Thin‐Film Aluminum Gallium Nitride Deep‐Ultraviolet Light‐Emitting Diodes

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
Conventional Ga‐polar aluminum gallium nitride (AlGaN) deep‐ultraviolet (UV) light‐emitting diodes (LEDs) suffer from polarization‐induced carrier separation and severe electron leakage, which limit device efficiency. In this regard, we present an N‐polar AlGaN‐based UV LED integrating a band‐engineered active region designed to overcome the ...
Swetha Velpula, Mano Bala Sankar Muthu, Ravi Teja Velpula, Hieu Pham Trung Nguyen   +3 more
wiley   +1 more source

AlGaN MSM photodetectors with recess-etched LT-AlGaN cap layers

IET Optoelectronics, 2007
AlGaN metal-semiconductor-metal photodetectors with recess-etched low temperature (LT)-AlGaN cap layers were fabricated. It was found that photocurrent can be enhanced and a sharp cut-off can be achieved by etching away the LT-AlGaN cap layer in the light absorption region while keeping the LT-AIGaN cap layer under the contact electrodes.
H. Hung, S.J. Chang, Y.C. Lin, H. Kuan, R.M. Lin   +4 more
openaire   +1 more source

Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices [PDF]

2017 12th European Microwave Integrated Circuits Conference (EuMIC), 2017
The interplay of self-heating and polarization affecting the current is studied in Al0.32Ga0.68N/AlN/GaN/Al0.1Ga0.9N Transmission Line Model (TLM) heterostructures with a scaled source-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental characteristics using an electro-thermal model.
Ahmeda, K, Ubochi, B, Kalna, K, Benbakhti, B, Duffy, SJ, Zhang, WD, Soltani, A   +6 more
openaire   +1 more source

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

A Review of Recent Research Advances on AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

IEEE Access
Due to environmental friendliness, small size, long lifetime, and adjustable light-emitting wavelength, AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) have great development potential in the fields of biochemical detection, sterilization ...
Yong Huang, Yu Li, Dan Xiang
doaj   +1 more source

UV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107

, 2017
We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface while the ...
Dolmanan, Surani Bin, Kumar, Sandeep, Muralidharan, Rangarajan, Nath, Digbijoy Neelim, Pratiyush, Anamika Singh, Tripathy, Sudhiranjan   +5 more
core   +1 more source