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Leveraging Deep Levels in Narrow Bandgap Bi0.5Sb1.5Te3 for Record‐High zTave Near Room Temperature
Advanced Functional Materials, 2020Deep levels in a narrow bandgap semiconductors are considered detrimental to their electrical performance. Here the constructive role of Indium‐induced deep levels in regulating the majority and minority carriers for state‐of‐the‐art average ...
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This work presents a study of trap levels in a mesoscopic multication lead halide perovskite solar cell structure. The investigation is performed by combining capacitance measurements, admittance measurements, Deep Level Transient Spectroscopy (DLTS ...
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Deep Level Fourier Spectroscopy for Determination of Deep Level Parameters
Japanese Journal of Applied Physics, 1982A new technique called deep-lebel Fourier spectroscopy (DLFS), is proposed. This is an efficient and convenient method for evaluating deep livels in semiconductors. The technique is presented with a frequency space analysis for the case of exponential capacitance transients. Taking the Fourier transforms of the transient capacitance values, the deep
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