Results 171 to 180 of about 310,485 (285)

Cell Adhesion by Design: Engineering Tissue Culture Scaffolds With Adhesion Cues

open access: yesAdvanced Materials Interfaces, EarlyView.
ABSTRACT In scaffold‐based tissue engineering, the matrix should provide adequate adhesion cues for cell attachment, spreading, and function. Given the multitude of adhesion receptors and the diversity of scaffolds, there are many approaches to render scaffolds adhesive, even though they are not all equivalent.
Dalia Dranseike   +3 more
wiley   +1 more source

Bioelectrical Interfaces Beyond Excitable Cells: Cancer, Aging, and Gene Expression Modulation

open access: yesAdvanced Materials Interfaces, EarlyView.
ABSTRACT The investigation of biological conductivity has evolved from its classical foundation based on ionic fluxes underpinning cardiac and neuronal excitability to a multifaceted regulator of cellular physiology. Traditional approaches for probing electrical events in living matter focused largely on action potentials recording.
Paolo Cadinu   +14 more
wiley   +1 more source

Vertex degrees in grid graphs of permutations

open access: yesDiscrete Mathematics Letters
Aubrey Blecher, Arnold Knopfmacher
openaire   +3 more sources

Morphology‐Controlled Silica Nanoparticle Coatings for Transparent Radiative Cooling

open access: yesAdvanced Materials Interfaces, EarlyView.
Transparent radiative cooling coatings are achieved by immobilizing solid and hollow silica spheres on glass. Particle morphology within sub‐monolayer coatings is shown to govern the trade‐off between visible and atmospheric window reflectance. Hollow‐sphere structures enable reduced thermal emission losses while preserving transparency, highlighting ...
Jefferson A. S. Lam   +8 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

<i>N</i> =1 Super Virasoro Tensor Categories. [PDF]

open access: yesCommun Math Phys
Creutzig T   +3 more
europepmc   +1 more source

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