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Reducing the Depletion Region Width at the Anode Interface via a Highly Doped Conjugated Polyelectrolyte Composite for Efficient Organic Solar Cells.

ACS Applied Materials and Interfaces
In the realm of organic solar cells (OSCs), the width of the depletion region at the anode interface is a critical factor that adversely impacts the open-circuit voltage (Voc) and the power conversion efficiency (PCE).
He Wang   +7 more
semanticscholar   +1 more source

Atomic scale depletion region at one dimensional MoSe2-WSe2 heterointerface

Applied Physics Letters, 2018
Lateral heterojunctions based on two dimensional (2D) transition metal dichalcogenides (TMDCs) potentially realize monolayer devices exploiting 2D electronic structures and the functions introduced by the presence of 1D heterointerfaces.
Yu-Hsun Chu   +9 more
semanticscholar   +1 more source

A semiconductor junction photoelectrochemical device without a depletion region

Nanoscale, 2019
We demonstrate depletion region-free semiconductor junctions in ultrathin Ni film-coated Si photoelectrochemical cells.
Jin-Young Jung   +5 more
openaire   +2 more sources

Depletion region thicknesses in diffused junctions

IEEE Transactions on Electron Devices, 1973
Closed-form expressions are derived for total thickness of the depletion region and thickness of the depletion region on the n side of the junction. The expressions are applicable to n-p junction devices with either complementary error function or Gaussian impurity distributions.
openaire   +1 more source

Morphine and Ethanol: Selective Depletion of Regional Brain Calcium

Science, 1974
Administration of morphine or ethanol to rats produces a decrease in regional brain calcium in vivo. This effect is selectively antagonized by the stereospecific narcotic antagonist naloxone. Reserpine and the dopamine-acetaldehyde conjugate salsolinol also produce a depletion of regional brain calcium, but only the salsolinol depletion is antagonized ...
D H, Ross, M A, Medina, H L, Cardenas
openaire   +2 more sources

Raman scattering in the depletion region of GaAs

Solid State Communications, 1974
Abstract We have obtained spectra for the LO phonon mode by Raman scattering associated with surface quantization of the hole states in the depletion layer of highly doped n -type GaAs samples. When semi-transparent metal contacts are employed, the zone-center LO peak shifts to higher frequency due to plasmon-phonon interaction. The observed effects
R. Tsu, H. Kawamura, L. Esaki
openaire   +1 more source

Time evolution of depletion region in poled silica

Applied Physics Letters, 2003
The electric field recorded in silica samples thermally poled during various intervals was measured by etching. The field is nearly uniform and increases to a maximum (∼3.6×108 V/m) in few minutes of poling and subsequently decreases slowly toward a steady level (∼1.4×108 V/m).
A. L. C. Triques   +6 more
openaire   +1 more source

Nonlinear optical absorption in semiconductor epitaxial depletion regions

Applied Physics Letters, 1988
We have observed an optically induced decrease in absorption near the band-gap energy in a single-heterostructure Schottky barrier depletion region. Photogenerated carriers created and trapped in the unbiased depletion region cause a dynamic decrease in the absorption. This depletion region electric-field absorption modulator (DREAM) exhibits nonlinear
N. M. Jokerst, E. Garmire
openaire   +1 more source

Surface polaritons in semiconductor films with depletion regions

SPIE Proceedings, 1995
A theory of TM type surface polaritons in semiconductor films possessing depletion transition layer, in which electron concentration changes according to the law of hyperbolic cosine, was built. The influence of dissipative as well as non-dissipative damping, caused by plasma resonance in transition layer, on dispersion properties of normal and ...
Nikolai N. Beletskii, Elena A. Gasan
openaire   +1 more source

Depletion regions and electronic surface states in doped semiconductor superlattices

Physical Review B, 1988
The electronic level structure of a type-I semiconductor superlattice such as GaAs/Al/sub x/Ga/sub 1-//sub x/As has been calculated self-consistently in a tight-binding envelope approximation. Fermi-level pinning due to defects at the ends of the superlattice gives rise to novel surfacelike states lying in electronic subband gaps and having localized ...
, Zhang, , Ulloa
openaire   +2 more sources

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