Results 281 to 290 of about 6,149,007 (323)
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ACS Applied Materials and Interfaces
In the realm of organic solar cells (OSCs), the width of the depletion region at the anode interface is a critical factor that adversely impacts the open-circuit voltage (Voc) and the power conversion efficiency (PCE).
He Wang +7 more
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In the realm of organic solar cells (OSCs), the width of the depletion region at the anode interface is a critical factor that adversely impacts the open-circuit voltage (Voc) and the power conversion efficiency (PCE).
He Wang +7 more
semanticscholar +1 more source
Atomic scale depletion region at one dimensional MoSe2-WSe2 heterointerface
Applied Physics Letters, 2018Lateral heterojunctions based on two dimensional (2D) transition metal dichalcogenides (TMDCs) potentially realize monolayer devices exploiting 2D electronic structures and the functions introduced by the presence of 1D heterointerfaces.
Yu-Hsun Chu +9 more
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A semiconductor junction photoelectrochemical device without a depletion region
Nanoscale, 2019We demonstrate depletion region-free semiconductor junctions in ultrathin Ni film-coated Si photoelectrochemical cells.
Jin-Young Jung +5 more
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Depletion region thicknesses in diffused junctions
IEEE Transactions on Electron Devices, 1973Closed-form expressions are derived for total thickness of the depletion region and thickness of the depletion region on the n side of the junction. The expressions are applicable to n-p junction devices with either complementary error function or Gaussian impurity distributions.
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Morphine and Ethanol: Selective Depletion of Regional Brain Calcium
Science, 1974Administration of morphine or ethanol to rats produces a decrease in regional brain calcium in vivo. This effect is selectively antagonized by the stereospecific narcotic antagonist naloxone. Reserpine and the dopamine-acetaldehyde conjugate salsolinol also produce a depletion of regional brain calcium, but only the salsolinol depletion is antagonized ...
D H, Ross, M A, Medina, H L, Cardenas
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Raman scattering in the depletion region of GaAs
Solid State Communications, 1974Abstract We have obtained spectra for the LO phonon mode by Raman scattering associated with surface quantization of the hole states in the depletion layer of highly doped n -type GaAs samples. When semi-transparent metal contacts are employed, the zone-center LO peak shifts to higher frequency due to plasmon-phonon interaction. The observed effects
R. Tsu, H. Kawamura, L. Esaki
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Time evolution of depletion region in poled silica
Applied Physics Letters, 2003The electric field recorded in silica samples thermally poled during various intervals was measured by etching. The field is nearly uniform and increases to a maximum (∼3.6×108 V/m) in few minutes of poling and subsequently decreases slowly toward a steady level (∼1.4×108 V/m).
A. L. C. Triques +6 more
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Nonlinear optical absorption in semiconductor epitaxial depletion regions
Applied Physics Letters, 1988We have observed an optically induced decrease in absorption near the band-gap energy in a single-heterostructure Schottky barrier depletion region. Photogenerated carriers created and trapped in the unbiased depletion region cause a dynamic decrease in the absorption. This depletion region electric-field absorption modulator (DREAM) exhibits nonlinear
N. M. Jokerst, E. Garmire
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Surface polaritons in semiconductor films with depletion regions
SPIE Proceedings, 1995A theory of TM type surface polaritons in semiconductor films possessing depletion transition layer, in which electron concentration changes according to the law of hyperbolic cosine, was built. The influence of dissipative as well as non-dissipative damping, caused by plasma resonance in transition layer, on dispersion properties of normal and ...
Nikolai N. Beletskii, Elena A. Gasan
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Depletion regions and electronic surface states in doped semiconductor superlattices
Physical Review B, 1988The electronic level structure of a type-I semiconductor superlattice such as GaAs/Al/sub x/Ga/sub 1-//sub x/As has been calculated self-consistently in a tight-binding envelope approximation. Fermi-level pinning due to defects at the ends of the superlattice gives rise to novel surfacelike states lying in electronic subband gaps and having localized ...
, Zhang, , Ulloa
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