Results 271 to 280 of about 302,258 (333)
Traceless Regulation of Genetic Circuitry
Energy‐based, as opposed to molecular, control offers unprecedented improvements in key circuit parameters. This review summarizes the fundamentals of such traceless switches, categorizes them by trigger modalities, and compares and contrasts distinct advantages as well as shortcomings of each kind.
Gokberk Unal, Martin Fussenegger
wiley +1 more source
Quercetin as a Bitter Taste Receptor Agonist with Anticancer Effects in Head and Neck Cancer Cells. [PDF]
Turner G +5 more
europepmc +1 more source
Compared to untargeted therapy, the targeted nanocarrier, Angiopep‐2‐conjugated Lipid Nanoparticle (A‐LNP) loaded with TGN‐020 (TGN), selectively accumulated in stroke‐injured regions. It suppressed local aquaporin‐4 (AQP4) overexpression, thereby alleviating cerebral edema and hypoperfusion while preserving global glymphatic clearance.
Lei Jin +18 more
wiley +1 more source
The inherent conjugation effects between molecular chains in PEI dielectrics induce substantial energy loss escalation at elevated temperatures. This study incorporated BNNDs into PEI films, successfully achieving effective capture of motion charges under high‐temperature conditions.
Wen‐jin Hu +5 more
wiley +1 more source
The adrenal gland and primary aldosteronism: anatomy, steroidogenesis, regulation, and genetic insights. [PDF]
Long KC, Azizan EA.
europepmc +1 more source
This carrier‐free, esterase‐responsive nanoaggregate integrates a mitochondria‐targeting photosensitizer with a non‐nucleotide STING agonist to achieve localized photoactivation and immune reprogramming. ICyM2 remodels tumor stroma, induces potent immunogenic cell death, and triggers intratumoral STING activation, collectively revitalizing the ...
Yixuan Zhang +18 more
wiley +1 more source
From Plankton to Primates: How VSP Sequence Diversity Shapes Voltage Sensing. [PDF]
Leong LM, Kim Y, Baker BJ.
europepmc +1 more source
Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors
This work introduces a defect‐tolerant integration strategy that enables freestanding BaTiO3 membranes to form low‐leakage top‐gate junctions with MoS2. The resulting FeFETs exhibit a record 0.22 V nm−1 memory window, ultrahigh‐k response, and near‐ideal subthreshold swings.
Zejing Guo +16 more
wiley +1 more source

