Results 91 to 100 of about 430,501 (291)

The Elastic Dielectric [PDF]

Indiana University Mathematics Journal, 1956
No Abstract ...
openaire   +3 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Giant dielectric permittivity in ferroelectric thin films : domain wall ping pong [PDF]

, 2015
This study was supported by the National Key Basic Research Program of China (No. 2014CB921004), the National Natural Science Foundation of China (Nos.
Scott, James Floyd, Wei Zhang, D., Seong Hwang, C., Jian Meng, X., Hyuk Park, M., Jin Kim, Y., Quan Jiang, A., Yoo, S.   +7 more
core   +1 more source

Where can the low dielectric constant go in dense inorganic materials?

Journal of Materiomics, 2023
Lei Li, Xiao Li Zhu, Xiang Ming Chen
doaj   +1 more source

Wearable Smart Patches on Sustainable Chitosan With Reversible Microbial Growth‐Inhibitory Properties

Advanced Functional Materials, EarlyView.
ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti, Kubra Kocak, Andrea Michel, Enrico Cavarzerani, Ali Raza, Petr Rohzin, Nouha Loudhaief, Saimir Frroku, Nicolò Baldovin, Hazrat Bilal, Alvise Perosa, Maurizio Selva, Flavio Rizzolio, Luca Sbuelz, Sabrina Tamburini, Domenico De Fazio, Giovanni Antonio Salvatore   +16 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Influences of Ga3+ doping content on microstructure and interfacial polarization in colossal permittivity GayNb0.025Ti0.975-yO2 ceramics

International Journal of Smart and Nano Materials
Colossal permittivity (CP) materials, particularly co–doped TiO2 ceramics, have garnered significant attention for their potential in high–performance ceramic capacitors.
Wattana Tuichai, Nutthakritta Phromviyo, Navadecho Chankhunthod, Pornjuk Srepusharawoot, Prasit Thongbai   +4 more
doaj   +1 more source

Robust Electrocaloric Performance Enabled by Highly‐Polar Frustrated Nanodomains in NaNbO3‐Based Ferrodistortive Relaxor

Advanced Functional Materials, EarlyView.
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li, Changshun Dai, He Qi, Jiecheng Liu, Xiaoming Shi, Heng Zhou, Qiong Yang, Mingsheng Long, Lei Shan, Chunchang Wang, Jianli Wang, Zhenxiang Cheng   +11 more
wiley   +1 more source

Image charge inclusion in the dielectric sphere revisited [PDF]

, 2012
Van Siclen (1988 Am. J. Phys. 56 1142) reported a curious property of a dielectric sphere in the field of an external point charge: the field outside the sphere generated by the combination of the original charge exterior and the Kelvin image charge ...
Redzic, Milan, Redzic, Dragan, Eldakli, Mohsan   +2 more
core   +2 more sources

Nano-sized BaTiO3 incorporated P(VDF-HFP)/PMMA blend matrix based polymer nanocomposites for cutting edge opto- and micro-electronics

Next Materials
Utilizations of polymer nanocomposites as flexible nanodielectrics for energy storage as well as harvesters, dielectric substrates and electrical insulators in the fabrication of a variety of microelectronic devices, and also as innovative optical ...
Chandra Prabha Charan, R.J. Sengwa
doaj   +1 more source