Results 71 to 80 of about 131,273 (269)
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Spin Injection Of Exciton–Polaritons With Halide Perovskites At Room Temperature
A monolithic Tamm‐plasmon microcavity embedding a two‐dimensional halide perovskite enables room‐temperature spin injection of exciton‐polaritons under quasi‐resonant optical excitation. Polarization‐resolved spectroscopy reveals partial preservation of the injected spin in the lower polariton branch, while bare excitons remain fully depolarized.
Elena Sendarrubias Arias‐Camisón +8 more
wiley +1 more source
Utilizations of polymer nanocomposites as flexible nanodielectrics for energy storage as well as harvesters, dielectric substrates and electrical insulators in the fabrication of a variety of microelectronic devices, and also as innovative optical ...
Chandra Prabha Charan, R.J. Sengwa
doaj +1 more source
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source
The un-doped and doped lead-free piezoelectric potassium sodium niobate (K0.5Na0.5NbO3, KNN) ceramics with different amounts of Mn were prepared. The decreased dielectric losses and the improved electrical properties were observed in the Mn-doped KNN ...
Lingyan Wang +5 more
doaj +1 more source
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian +1 more
wiley +1 more source
Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
Raman spectra analysis for Ba[(Mg1-xNix)1/3Nb2/3]O3 microwave dielectric ceramics
Raman spectra analysis has been carried out for both the as-sintered and annealed Ba[(Mg1−xNix)1/3Nb2/3]O3 ceramics. Based on the harmonic resonant model, all the Raman modes are successfully assigned according to the effects of ion substitution and post-
Tu Lai Sun, Xiang Ming Chen
doaj +1 more source
Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu +7 more
wiley +1 more source
A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan +16 more
wiley +1 more source

