Results 121 to 130 of about 871,466 (347)
Control of Ferromagnetism of Vanadium Oxide Thin Films by Oxidation States
The nonstoichiometric VOx exhibits a distinct ferromagnetic hysteresis loop and demonstrates a high magnetic susceptibility (χ=dMdH$ = \frac{{dM}}{{dH}}\;$∼10). Micromagnetic simulations show the results of the “partial volume fraction ferromagnetic phase model” for VOx/Co/Pt structure.
Kwonjin Park+9 more
wiley +1 more source
Tunable Tactile Synapses Enabled by Erasable Doping in Iongel‐Gated Nanotube Network Transistors
Artificial tactile synaptic sensors are realized by an iongel‐gated single‐walled carbon nanotube (SWCNT) transistor with reversible doping characteristics. The device senses and memorizes tactile stimuli and exhibits gate bias‐dependent excitatory or inhibitory synaptic behavior.
Yan Huang+5 more
wiley +1 more source
Ca3Ti2O7 with Ruddlesden-Popper structure exhibits the largest polarization among the known hybrid improper ferroelectrics. However, the high Curie temperature impedes the thorough study of phase transition through dielectric characterization.
Z.Z. Hu+6 more
doaj
Dielectric Investigation on Coals. I. Dielectric Properties of Japanese Coals [PDF]
Isao Miyasita, Keniti Higasi
openalex +1 more source
This study examines the surface characteristics of AlInP (001), crucial for advanced solar cells and photoelectrochemical devices. Using theoretical modeling and experiments, it identifies how phosphorus‐rich and indium‐rich surfaces create mid‐gap states that pin the Fermi level and influence ultrafast electron dynamics.
Mohammad Amin Zare Pour+11 more
wiley +1 more source
Rich Oxygen Vacancies in Bimetallic MnCo2O4.5 Spheres for Enhancing Lean Methane Catalytic Oxidation
Methane is the second most prevalent greenhouse gas after carbon dioxide in global climate change, and catalytic oxidation technology is a very effective way to eliminate methane.
Ke Yang+4 more
doaj +1 more source
Effects of High Electric Fields on Dielectric Liquids [PDF]
E. T. Pierce
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Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan+11 more
wiley +1 more source
I. On the constant of dielectricity and the double refraction of insulating fluids [PDF]
G Quincke
openalex +1 more source