Results 111 to 120 of about 1,842,828 (301)
Dielectric constant (DC) and dielectric loss factor (DLF) are the two principal parameters that determine the coupling and distribution of electromagnetic energy during radiofrequency and microwave processing.
Sakiyan, Ozge +2 more
core +1 more source
Photoaligned and photopatterned liquid crystal platforms provide programmable control of optical phase, polarization, and spin‐orbit interactions, enabling compact generation of structured light and complex wavefronts. This review highlights how tailored molecular orientations transform simple beams into designed optical fields, opening versatile ...
Le Zhou +6 more
wiley +1 more source
High dielectric constant ceramics fillers are widely used as fillers in polymer matrix to prepare high performance dielectric composites. Homogeneous filler distribution in these composites films is found to be quite difficult to achieve balance between ...
Chengxiao Sun +6 more
doaj +1 more source
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source
Dielectric properties of new Bi-based BNT–BKT–BiFeO3 lead-free piezoelectric ceramics
:A new Bi-based (Bi0.5Na0.5)TiO3-based lead-free piezoelectric ceramics with perovskite structure, (1-x-y)BNT–xBKT– yBiFeO3, was prepared by a conventional ceramic sintering technique.
Zhou Chang-Rong, 刘心宇, 杨桂华
doaj
Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen +5 more
wiley +1 more source
Electrical and chemical characterisation of ultrathin transistor gate dielectric layers [PDF]
This work examines the suitability of both ultrathin Silicon Oxynitride (SiON) and Hafnium Silicate (HfSiON) layers to be used as high-permittivity gate dielectrics to serve as a replacement to silicon dioxide (Si0 2 )in future Metal-Oxide-Semiconductor (
O'Connor, Robert
core +2 more sources
The design of intrinsically robust stretchable semiconducting polymers was achieved through OTBS‐mediated post‐functionalization of PDPP2T side chains with UPy units, generating dual hydrogen‐bonding motifs comprising weaker urethane linkages and strong quadruple UPy interactions along the long alkyl side chain, which is crucial for achieving desirable
Dinda Bazliah +7 more
wiley +1 more source
Nanoscale Spatial Tuning of Superconductivity in Cuprate Thin Films via Direct Laser Writing
Maskless direct laser writing enables local control of oxygen stoichiometry in epitaxial YBCO thin films under ambient conditions. Sub‐micrometer grayscale patterns with tunable optical response and superconducting transport properties are achieved.
Irene Biancardi +11 more
wiley +1 more source
It's considered the way in which the method of a cylindrical rod together with a vector network analyzer is used to determine the dielectric constant. The algorithm for determining the dielectric constant is developed.
N. A. Pevneva +2 more
doaj

