Results 131 to 140 of about 409,557 (326)

Photoswitching Conduction in Framework Materials

open access: yesAdvanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez   +4 more
wiley   +1 more source

Encapsulating Zinc Powder in MXene/Silk Scaffolds with Zincophilic‐Hydrophobic Polymer for Flexible Zinc‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
This work develops flexible zinc‐ion batteries (FZIBs) using a zincophilic/hydrophobic polymer (thermoplastic polycarbonate‐based polyurethane, TPCU) to protect Zn powder anodes and MXene/Silk (MXS) as flexible current collectors. The designed TPCU‐ZnP@MXS structure enables uniform Zn deposition, yielding dendrite‐free anodes with stable cycling ...
Zixuan Yang   +8 more
wiley   +1 more source

Investigation on Dielectric Constant of Zinc Oxide

open access: hybrid, 2009
Khalid Omar   +2 more
openalex   +2 more sources

Defect‐Mediated Scintillation in Fully Inorganic Perovskites via Water‐Induced 0D/3D Phase Modulation

open access: yesAdvanced Functional Materials, EarlyView.
A reproducible synthesis to control 3D/0D phase ratios via water‐tuned solvent–antisolvent methods is presented. Enhanced scintillation yield and ultrafast decay are achieved. Defect‐driven emission mechanisms are revealed through cathodoluminescence and radioluminescence, shedding light on the underexplored role of the 0D Cs4PbBr6 and mixed 0D/3D ...
Mario Calora   +18 more
wiley   +1 more source

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu   +12 more
wiley   +1 more source

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