Results 271 to 280 of about 13,935 (298)

Hysteresis in Dielectric Properties of Fluid-Saturated Porous Media

Proceedings of SPE Asia Pacific Improved Oil Recovery Conference, 1999
Abstract We present in this paper the results of measurements of the complex dielectric permittivity and electric conductivity in three different porous media, made from unconsolidated acid-purified quartz sand and glass grains. To ensure the generality of the results, we use sand and glass grains of different geometry and particle size ...
Buu-Long Nguyen, Johannes Bruining, Evert C. Slob   +2 more
openaire   +1 more source

Photoinduced hysteresis changes and charge trapping in BaTiO3 dielectrics

Applied Physics Letters, 1994
We have been able to observe intrinsic photoinduced changes in the hysteresis response of BaTiO3 single crystals by the application of ultraviolet (UV) light in combination with an applied bias. The amount of switchable polarization can be suppressed by over 90% by this UV/bias treatment. The photoferroelectric effects are reproducible, reversible, and
W. L. Warren, D. Dimos
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Reduction of Dielectric Hysteresis in Multilayered Films via Nanoconfinement

Macromolecules, 2012
Micro/nanolayer coextrusion was used to fabricate polycarbonate (PC)/poly(vinylidene fluoride) (PVDF) layered films with significantly reduced dielectric losses while maintaining high energy density. The high-field polarization hysteresis was characterized for layered films as a function of PVDF layer thickness (6000 to 10 nm) and composition (10 to 70
Matthew Mackey, Donald E. Schuele, Lei Zhu, Lionel Flandin, Mason A. Wolak, James S. Shirk, Anne Hiltner, Eric Baer   +7 more
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Characterization and modeling of hysteresis phenomena in high K dielectrics

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2005
An original technique for the dynamic analysis of Id(Vg) hysteresis on high K stacks is proposed, allowing the characterization of Vt shift transients at short times. The experimental results demonstrate that trapping/de-trapping mechanism by tunneling from the substrate must be considered.
C. Leroux, J. Mitard, G. Ghibaud, X. Garros, G. Reimbold, B. Guillaumot, F. Martin   +6 more
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Apparent dielectric hysteresis without significant dipolar movement?

10th International Symposium on Electrets (ISE 10). Proceedings (Cat. No.99 CH36256), 2003
Under suitable conditions, a hysteresis-type electric-field dependence of the current or of the polarization can be observed during poling of ferroelectric polymer films. But it is found here that the poling of nonpolar polymers which contain excess charges sometimes leads to a similar hysteresis behavior. In support of this finding, we present current
Wegener, Michael, Bauer, Siegfried, Gerhard, Reimund (Prof. Dr.)   +2 more
openaire   +2 more sources

Enhancing Hysteresis in Graphene Devices Using Dielectric Screening

IEEE Electron Device Letters, 2012
A method of increasing hysteresis in graphene devices with a dielectric coating is presented. By controlling the sweep direction of the gate bias, “high-conductance” and “low-conductance” states can be produced by transitioning the device between dielectric screened and unscreened states, which is a fundamentally new approach to producing hysteresis ...
Kevin Brenner, T. J. Beck, James D. Meindl   +2 more
openaire   +1 more source

A reverse hysteresis effect of graphene transistors with amorphous silicon gate dielectric

Microelectronics Reliability, 2018
Abstract In this paper, graphene field effect transistors with amorphous silicon gate dielectric have been fabricated. A reverse hysteresis effect in these transistors is observed at room temperature. This property is different from that of the graphene field effect transistors with SiO2 gate dielectric.
Qingwei Zhang, Ping Li 0014, Yongbo Liao, Gang Wang, Rongzhou Zeng, Heng Wang   +5 more
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Dielectric Constant and Ferroelectric Hysteresis of Rb₂ZnBr₄

Physica Status Solidi (a), 1978
The low frequency dielectric constant of Rb2ZnBr4 is measured in the normal phase, the modulated phase, and in that one with a tripled c-axis. In the latter phase a ferroelectric hysteresis loop is observed. The spontaneous polarization (of about 0.14 μC/cm2) is very small as well as the anomalies in the dielectric constant.
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On the Dielectric Hysteresis Loops of a Uniaxial Ferroelectric

Crystallography Reports, 2023
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Dielectric hysteresis in pyrolusite

Physica, 1959
V.G. Bhide, R.V. Damle, R.H. Dani
openaire   +1 more source