Results 261 to 270 of about 429,377 (286)

Reduction of Dielectric Hysteresis in Multilayered Films via Nanoconfinement

Macromolecules, 2012
Micro/nanolayer coextrusion was used to fabricate polycarbonate (PC)/poly(vinylidene fluoride) (PVDF) layered films with significantly reduced dielectric losses while maintaining high energy density. The high-field polarization hysteresis was characterized for layered films as a function of PVDF layer thickness (6000 to 10 nm) and composition (10 to 70
Matthew Mackey, Donald E. Schuele, Lei Zhu, Lionel Flandin, Mason A. Wolak, James S. Shirk, Anne Hiltner, Eric Baer   +7 more
openaire   +1 more source

Characterization and modeling of hysteresis phenomena in high K dielectrics

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2005
An original technique for the dynamic analysis of Id(Vg) hysteresis on high K stacks is proposed, allowing the characterization of Vt shift transients at short times. The experimental results demonstrate that trapping/de-trapping mechanism by tunneling from the substrate must be considered.
C. Leroux, J. Mitard, G. Ghibaud, X. Garros, G. Reimbold, B. Guillaumot, F. Martin   +6 more
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Apparent dielectric hysteresis without significant dipolar movement?

10th International Symposium on Electrets (ISE 10). Proceedings (Cat. No.99 CH36256), 2003
Under suitable conditions, a hysteresis-type electric-field dependence of the current or of the polarization can be observed during poling of ferroelectric polymer films. But it is found here that the poling of nonpolar polymers which contain excess charges sometimes leads to a similar hysteresis behavior. In support of this finding, we present current
Wegener, Michael, Bauer, Siegfried, Gerhard, Reimund (Prof. Dr.)   +2 more
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Enhancing Hysteresis in Graphene Devices Using Dielectric Screening

IEEE Electron Device Letters, 2012
A method of increasing hysteresis in graphene devices with a dielectric coating is presented. By controlling the sweep direction of the gate bias, “high-conductance” and “low-conductance” states can be produced by transitioning the device between dielectric screened and unscreened states, which is a fundamentally new approach to producing hysteresis ...
Kevin Brenner, T. J. Beck, James D. Meindl   +2 more
openaire   +1 more source

A reverse hysteresis effect of graphene transistors with amorphous silicon gate dielectric

Microelectronics Reliability, 2018
Abstract In this paper, graphene field effect transistors with amorphous silicon gate dielectric have been fabricated. A reverse hysteresis effect in these transistors is observed at room temperature. This property is different from that of the graphene field effect transistors with SiO2 gate dielectric.
Qingwei Zhang, Ping Li 0014, Yongbo Liao, Gang Wang, Rongzhou Zeng, Heng Wang   +5 more
openaire   +2 more sources

Dielectric Constant and Ferroelectric Hysteresis of Rb₂ZnBr₄

Physica Status Solidi (a), 1978
The low frequency dielectric constant of Rb2ZnBr4 is measured in the normal phase, the modulated phase, and in that one with a tripled c-axis. In the latter phase a ferroelectric hysteresis loop is observed. The spontaneous polarization (of about 0.14 μC/cm2) is very small as well as the anomalies in the dielectric constant.
openaire   +1 more source

On the Dielectric Hysteresis Loops of a Uniaxial Ferroelectric

Crystallography Reports, 2023
openaire   +1 more source

Dielectric hysteresis in pyrolusite

Physica, 1959
V.G. Bhide, R.V. Damle, R.H. Dani
openaire   +1 more source

Hysteresis of the microwave dielectric isotherm of the hydration of ?-chymotrypsin

Bulletin of the Academy of Sciences of the USSR Division of Chemical Science, 1978
V. M. Bazin, Yu. I. Khurgin
openaire   +1 more source

Feedforward Control of the Rate-Dependent Viscoelastic Hysteresis Nonlinearity in Dielectric Elastomer Actuators

IEEE Robotics and Automation Letters, 2019
Jiang Zou, Guoying Gu
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