Results 291 to 300 of about 813,582 (314)

Photoinduced hysteresis changes and charge trapping in BaTiO3 dielectrics

Applied Physics Letters, 1994
We have been able to observe intrinsic photoinduced changes in the hysteresis response of BaTiO3 single crystals by the application of ultraviolet (UV) light in combination with an applied bias. The amount of switchable polarization can be suppressed by over 90% by this UV/bias treatment. The photoferroelectric effects are reproducible, reversible, and
W. L. Warren, D. Dimos
openaire   +1 more source

Characterization and modeling of hysteresis phenomena in high K dielectrics

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2005
An original technique for the dynamic analysis of Id(Vg) hysteresis on high K stacks is proposed, allowing the characterization of Vt shift transients at short times. The experimental results demonstrate that trapping/de-trapping mechanism by tunneling from the substrate must be considered.
C. Leroux, J. Mitard, G. Ghibaud, X. Garros, G. Reimbold, B. Guillaumot, F. Martin   +6 more
openaire   +1 more source

Apparent dielectric hysteresis without significant dipolar movement?

10th International Symposium on Electrets (ISE 10). Proceedings (Cat. No.99 CH36256), 2003
Under suitable conditions, a hysteresis-type electric-field dependence of the current or of the polarization can be observed during poling of ferroelectric polymer films. But it is found here that the poling of nonpolar polymers which contain excess charges sometimes leads to a similar hysteresis behavior. In support of this finding, we present current
Wegener, Michael, Bauer, Siegfried, Gerhard, Reimund (Prof. Dr.)   +2 more
openaire   +2 more sources

Enhancing Hysteresis in Graphene Devices Using Dielectric Screening

IEEE Electron Device Letters, 2012
A method of increasing hysteresis in graphene devices with a dielectric coating is presented. By controlling the sweep direction of the gate bias, “high-conductance” and “low-conductance” states can be produced by transitioning the device between dielectric screened and unscreened states, which is a fundamentally new approach to producing hysteresis ...
Kevin Brenner, T. J. Beck, James D. Meindl   +2 more
openaire   +1 more source

A reverse hysteresis effect of graphene transistors with amorphous silicon gate dielectric

Microelectronics Reliability, 2018
Abstract In this paper, graphene field effect transistors with amorphous silicon gate dielectric have been fabricated. A reverse hysteresis effect in these transistors is observed at room temperature. This property is different from that of the graphene field effect transistors with SiO2 gate dielectric.
Qingwei Zhang, Ping Li 0014, Yongbo Liao, Gang Wang, Rongzhou Zeng, Heng Wang   +5 more
openaire   +1 more source

Dielectric Constant and Ferroelectric Hysteresis of Rb₂ZnBr₄

Physica Status Solidi (a), 1978
The low frequency dielectric constant of Rb2ZnBr4 is measured in the normal phase, the modulated phase, and in that one with a tripled c-axis. In the latter phase a ferroelectric hysteresis loop is observed. The spontaneous polarization (of about 0.14 μC/cm2) is very small as well as the anomalies in the dielectric constant.
openaire   +1 more source

Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors

, 2018
L. Sang, B. Ren, M. Liao, Y. Koide, M. Sumiya   +4 more
semanticscholar   +1 more source

Hysteresis of the microwave dielectric isotherm of the hydration of ?-chymotrypsin

Bulletin of the Academy of Sciences of the USSR Division of Chemical Science, 1978
V. M. Bazin, Yu. I. Khurgin
openaire   +1 more source

Development of a Butterfly Fractional-Order Backlash-Like Hysteresis Model for Dielectric Elastomer Actuators

IEEE Transactions on Industrial Electronics, 2023
Hongzhi Xu, Xiuyu Zhang, Chun-Yi Su
exaly  

Dielectric hysteresis loops of first-order ferroelectric bilayers and antiferroelectrics

, 2002
L. Ong, J. Osman, D. Tilley
semanticscholar   +1 more source