Results 131 to 140 of about 5,235,702 (288)

Electrical and chemical characterisation of ultrathin transistor gate dielectric layers [PDF]

, 2005
This work examines the suitability of both ultrathin Silicon Oxynitride (SiON) and Hafnium Silicate (HfSiON) layers to be used as high-permittivity gate dielectrics to serve as a replacement to silicon dioxide (Si0 2 )in future Metal-Oxide-Semiconductor (
O'Connor, Robert
core  

A Thermodynamic Model of Antiferroelectics and Its Application to Electric Field Induced Antiferroelectric‐Ferroelectric Transition in PbZrO3

Advanced Functional Materials, EarlyView.
A thermodynamic model that incorporates ferroelectric, antiferroelectric, and antiferrodistortive orders of PbZrO3${\rm PbZrO}_3$ is established and parameterized based on experimental measurements and first‐principles calculations. We derive a Clapeyron‐like equation for describing the temperature‐dependence of critical electric fields for the ...
Zhiyang Wang, Guodong Zhao, Aiden Ross, Long‐Qing Chen   +3 more
wiley   +1 more source

Dielectric properties of agricultural materials and their applications /

Dielectric Properties of Agricultural Materials and Their Applications provides an understanding of the fundamental principles governing dielectric properties of materials, describes methods for measuring such properties, and discusses many applications ...
Nelson, Stuart O.,author.
core  

Operando Tracking of Oxygen‐Vacancy Dynamics and Negative Capacitance in Ca‐Doped BiFeO3

Advanced Functional Materials, EarlyView.
Operando electrochemical impedance spectroscopy, combined with electrocoloration, enables a direct correlation between real‐space ionic redistribution and the corresponding frequency‐domain electrical response. In lateral Ca‐doped BiFeO3 devices, time‐resolved impedance snapshots capture the evolution from bulk‐dominated mixed conduction to an ...
Jeonghun Suh, Heung‐Sik Park, Jong‐Sook Lee, Chan‐Ho Yang   +3 more
wiley   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Non-Absorbing Dielectric Materials for Surface-Enhanced Spectroscopies and Chiral Sensing in the UV. [PDF]

Nanomaterials (Basel), 2020
Rosales SA, González F, Moreno F, Gutiérrez Y.   +3 more
europepmc   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

Advanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig, Clemens Wittberg, Dimitrios Spithouris, Regina Dittmann   +3 more
wiley   +1 more source

CSRR-Based Microwave Sensor for Dielectric Materials Characterization Applied to Soil Water Content Determination. [PDF]

Sensors (Basel), 2020
Oliveira JGD, Pinto ENMG, Silva Neto VP, D'Assunção AG.   +3 more
europepmc   +1 more source