Results 111 to 120 of about 139,609 (311)

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Electrical and chemical characterisation of ultrathin transistor gate dielectric layers [PDF]

open access: yes, 2005
This work examines the suitability of both ultrathin Silicon Oxynitride (SiON) and Hafnium Silicate (HfSiON) layers to be used as high-permittivity gate dielectrics to serve as a replacement to silicon dioxide (Si0 2 )in future Metal-Oxide-Semiconductor (
O'Connor, Robert, O\u27Connor, Robert
core  

Shock Properties Characterization of Dielectric Materials Using Millimeter-Wave Interferometry and Convolutional Neural Networks. [PDF]

open access: yesSensors (Basel), 2023
Mapas J   +7 more
europepmc   +1 more source

Spin Injection Of Exciton–Polaritons With Halide Perovskites At Room Temperature

open access: yesAdvanced Functional Materials, EarlyView.
A monolithic Tamm‐plasmon microcavity embedding a two‐dimensional halide perovskite enables room‐temperature spin injection of exciton‐polaritons under quasi‐resonant optical excitation. Polarization‐resolved spectroscopy reveals partial preservation of the injected spin in the lower polariton branch, while bare excitons remain fully depolarized.
Elena Sendarrubias Arias‐Camisón   +8 more
wiley   +1 more source

Fabrication and characterization of nanometer thin films for low-voltage DEAs [PDF]

open access: yes, 2016
Nanometer-thin films are the essential components of a low-voltage dielectric elastomer actuator (DEA). Comprising of two electrodes sandwiching a dielectric elastomeric material DEAs have evoked versatile materials research.
Weiss, Florian
core   +1 more source

Effect of the Dielectric Inhomogeneity Factor's Range on the Electrical Tree Evolution in Solid Dielectrics

open access: yesAdvances in Electrical and Electronic Engineering, 2016
The main contribution of the presented paper is to investigate the influence of the Dielectric Inhomogeneity Factor on the electrical tree evolution in solid dielectrics using cellular automata.
Hemza Medoukali   +2 more
doaj   +1 more source

A New Dielectric Material [PDF]

open access: yesNature, 1952
I HAVE prepared a ceramic material which, although apparently being pure rutile, has quite different dielectric properties. It was obtained by heating pure titanium oxide (TiO2) to a temperature of 1,400° C., as described elsewhere1. X-ray analysis leads to the same Debye–Scherrer pattern as rutile (axis ratio 1 : 0.911).
openaire   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi   +3 more
wiley   +1 more source

Space charge and its impact on DC breakdown of polymeric materials [PDF]

open access: yes, 2013
The presence of space charge will lead to distortion of electric field distribution within the dielectric material, resulting electric field enhancement in certain region of the dielectric. The electric field enhancement could cause material degradation,
Chen, George
core  

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