Results 91 to 100 of about 5,235,702 (288)

Interfacial‐Polarization Engineering in BNT‐Based Bulk Ceramics for Ultrahigh Energy‐Storage Density

Advanced Science
Ceramic capacitors, known for their exceptional energy‐storage performance (ESP), are crucial components in high‐pulsed power systems. However, their ESP is significantly constrained by breakdown strength (Eb), which is influenced by interfacial ...
Wenjun Cao, Li Li, Kun Chen, Xuecen Huang, Feng Li, Chunchang Wang, Jun Zheng, Xu Hou, Zhenxiang Cheng   +8 more
doaj   +1 more source

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

Advanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian, Jayakanth Ravichandran   +1 more
wiley   +1 more source

Giant dielectric permittivity in ferroelectric thin films : domain wall ping pong [PDF]

, 2015
This study was supported by the National Key Basic Research Program of China (No. 2014CB921004), the National Natural Science Foundation of China (Nos.
Scott, James Floyd, Wei Zhang, D., Seong Hwang, C., Jian Meng, X., Hyuk Park, M., Jin Kim, Y., Quan Jiang, A., Yoo, S.   +7 more
core   +1 more source

Thermal near-field scattering characteristics for dielectric materials. [PDF]

Sci Rep, 2023
Sakuma R, Lin KT, Kajihara Y.
europepmc   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Effect of the Dielectric Inhomogeneity Factor's Range on the Electrical Tree Evolution in Solid Dielectrics

Advances in Electrical and Electronic Engineering, 2016
The main contribution of the presented paper is to investigate the influence of the Dielectric Inhomogeneity Factor on the electrical tree evolution in solid dielectrics using cellular automata.
Hemza Medoukali, Mossadek Guibadj, Boubaker Zegnini   +2 more
doaj   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source

Dielectric and optical properties of organic photorefractive materials [PDF]

, 1996
The work presented in this thesis is derived from experimentation in the field of polymeric photorefractive materials. Low T(_g) polymeric composites were prepared, based on the well-known photoconductive polymer PVK (maximum 50% w/w), sensitized with ...
Farsari, Maria, Farsari, M.
core  

Shock Properties Characterization of Dielectric Materials Using Millimeter-Wave Interferometry and Convolutional Neural Networks. [PDF]

Sensors (Basel), 2023
Mapas J, Lefrançois A, Aubert H, Comte S, Barbarin Y, Lavayssière M, Rougier B, Dore A.   +7 more
europepmc   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source