Results 81 to 90 of about 5,235,702 (288)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Effect of pre-treatment of nanofillers on the dielectric properties of epoxy nanocomposites [PDF]

open access: yes, 2014
Early researches show that the nano filler dispersion has a significant effect on the dielectric properties of resulting epoxy nanocomposites. In this paper a comparative study on the dielectric permittivity, AC breakdown behaviours and glass transition ...
Wang, Qi, Chen, George
core   +1 more source

Partial Discharge Behaviour within Two Spherical Cavities in a Dielectric Material [PDF]

open access: yes, 2011
In high voltage insulation systems, a typical defect that exists is a void cavity. It is known that voids are a common source of partial discharge (PD) activity within an insulation system.
Illias, H A, Lewin, P L, Chen, G
core   +2 more sources

Where can the low dielectric constant go in dense inorganic materials?

open access: yesJournal of Materiomics, 2023
Lei Li, Xiao Li Zhu, Xiang Ming Chen
doaj   +1 more source

Wearable Smart Patches on Sustainable Chitosan With Reversible Microbial Growth‐Inhibitory Properties

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti   +16 more
wiley   +1 more source

Achieving a Mode-Selective Optical Waveguide in a PIN-PMN-PT Single Crystal via a Nickel In-Diffusion Method

open access: yesNanomaterials
Relaxor ferroelectric single crystals, such as Pb(In1/2Nb2/3)O3–Pb(Mg1/2Nb2/3)O3–PbTiO3, possess extraordinary electro-optic (EO) coefficients, offering immense potential for next-generation integrated modulators.
Yuebin Zhang   +13 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Robust Electrocaloric Performance Enabled by Highly‐Polar Frustrated Nanodomains in NaNbO3‐Based Ferrodistortive Relaxor

open access: yesAdvanced Functional Materials, EarlyView.
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li   +11 more
wiley   +1 more source

Structural phase transition and dielectric relaxation in Pb(Zn1/3Nb2/3)O3 single crystals [PDF]

open access: yes, 2005
The structure and the dielectric properties of Pb(Zn1/3Nb2/3)O3 (PZN) crystal have been investigated by means of high-resolution synchrotron x-ray diffraction (with an x-ray energy of 32 keV) and dielectric spectroscopy (in the frequency range 100 Hz–1 ...
Bokov, A.A.   +9 more
core   +2 more sources

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi   +3 more
wiley   +1 more source

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