Results 81 to 90 of about 5,235,702 (288)
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Effect of pre-treatment of nanofillers on the dielectric properties of epoxy nanocomposites [PDF]
Early researches show that the nano filler dispersion has a significant effect on the dielectric properties of resulting epoxy nanocomposites. In this paper a comparative study on the dielectric permittivity, AC breakdown behaviours and glass transition ...
Wang, Qi, Chen, George
core +1 more source
Partial Discharge Behaviour within Two Spherical Cavities in a Dielectric Material [PDF]
In high voltage insulation systems, a typical defect that exists is a void cavity. It is known that voids are a common source of partial discharge (PD) activity within an insulation system.
Illias, H A, Lewin, P L, Chen, G
core +2 more sources
Where can the low dielectric constant go in dense inorganic materials?
Lei Li, Xiao Li Zhu, Xiang Ming Chen
doaj +1 more source
ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti +16 more
wiley +1 more source
Relaxor ferroelectric single crystals, such as Pb(In1/2Nb2/3)O3–Pb(Mg1/2Nb2/3)O3–PbTiO3, possess extraordinary electro-optic (EO) coefficients, offering immense potential for next-generation integrated modulators.
Yuebin Zhang +13 more
doaj +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li +11 more
wiley +1 more source
Structural phase transition and dielectric relaxation in Pb(Zn1/3Nb2/3)O3 single crystals [PDF]
The structure and the dielectric properties of Pb(Zn1/3Nb2/3)O3 (PZN) crystal have been investigated by means of high-resolution synchrotron x-ray diffraction (with an x-ray energy of 32 keV) and dielectric spectroscopy (in the frequency range 100 Hz–1 ...
Bokov, A.A. +9 more
core +2 more sources
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source

