Results 61 to 70 of about 35,909 (310)

Cole-Cole dielectric relaxation

Технологія та конструювання в електронній апаратурі, 2004
A model of the microstructure of disordered media exhibiting non-exponential relaxation has been constructed. The proposed model is based on a fractal approach to the structuring of the medium and the identification of hierarchical levels of short-range ...
V. V. Novikov, О. А. Komkova
doaj  

Dielectric relaxation of interfacial polarizable molecules in chitosan ice-hydrogel materials

Journal of Materiomics, 2018
The functionalities of hydrogel-based smart materials are highly related to the electrostatic interactions and molecular polarization associated with the polymer networks and encapsulated water droplets, and therefore the dielectric responses of the ...
Y.Q. Li, C.X. Zhang, P. Jia, Y. Zhang, L. Lin, Z.B. Yan, X.H. Zhou, J.–M. Liu   +7 more
doaj   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer

Advanced Functional Materials, EarlyView.
Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero, Meghna Jha, Elsa Veronica Flores‐Vela, Joost Kimpel, Andreas Schaefer, Jiali Guo, Jesika Asatryan, Alberto Peinador Veiga, Shuichi Haraguchi, Per‐Anders Carlsson, Jaime Martín, Mariano Campoy‐Quiles, Christian Müller   +12 more
wiley   +1 more source

Dielectric properties of thin-film metal/dielectric nanocomposites based on zirconium nitrides

Physics of Complex Systems
Zirconium oxynitride films were synthesized by sputtering zirconium nitride with subsequent atmospheric annealing to oxynitride. The resulting films were studied by dielectric spectroscopy.
Артур Альбертович Галиуллин, Иван Владимирович Лунев, Амир Илдусович Гумаров, Игорь Витальевич Янилкин   +3 more
doaj   +1 more source

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

Advanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa, Lin‐Ding Yuan, Stephen D. Wilson, James M. Rondinelli   +3 more
wiley   +1 more source

Unveiling dielectric relaxation and shear rheology in water

Physical Review Research
The complex dynamics of liquid water are manifested in its unique dielectric relaxation and nonlinear shear rheology. We investigate the dielectric and rheological responses of TIP4P/ɛ water using molecular dynamics simulations across a wide temperature ...
Songming Liu, Jiaxing Yuan
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

The frequency dependent response of the electrical impedance of UO2

, 1986
AC impedance techniques in the frequency range 5 Hz to 5 MHz have been employed to measure dielectric properties of single crystal UO2 in the form of plate specimens.
Saunders, GA, Stoneham, A.M., Hampton, RN, Hampton, R.N., Stoneham, AM, Saunders, G.A.   +5 more
core   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source