Results 61 to 70 of about 225,065 (306)
We report a continuous-wave ultraviolet laser at 349 nm obtained by intracavity frequency doubling of a diode-pumped Pr3+-doped LiYF4 laser. Power scaling of lasers at 698-nm fundamental wavelength was realized using an InGaN laser diode with a maximum ...
Zhe Liu +7 more
doaj +1 more source
Azobenzene photoswitches translate molecular‐scale E/Z photoisomerization into macroscopic material responses and device‐level photonic functions. This Review highlights how azobenzene research has evolved from molecular photochemistry to photoalignment, mass migration, photomechanics, and heat release, ultimately enabling holography, reconfigurable ...
Heeju Son +20 more
wiley +1 more source
Modeling of flowing gas diode pumped rare gas atoms laser
Diode-pumped rare gas lasers (DPRGLs) have the potential for high optical conversion efficiency and excellent beam quality, positioning them as promising candidates for directed energy lasers. This study proposes a semi-analytical model for a flowing gas
Hongyu Liu, Hanyuan Chen, Donglin Ma
doaj +1 more source
Resolving Heterogeneity of Targeted Lipid Nanoparticles Through Solution‐Based Biophysical Analyses
AF4‐UV‐DLS‐MALS‐SAXS resolves previously inaccessible targeted lipid nanoparticle (tLNP) subpopulations that differ in size, shape, and composition. Correlation of subpopulation‐resolved biophysical properties with in vivo RNA delivery reveals that targeted placental transfection is associated with distinct tLNP subpopulations rather than ensemble ...
Hannah C. Geisler +14 more
wiley +1 more source
Operation Limits of Integrated Photo‐Rechargeable Batteries
This study elucidates the operational limitations of integrated photo‐rechargeable batteries. We demonstrate that the photo‐charging process is fundamentally restricted not only by material‐to‐material energy level alignment but also by transient capacitive charge accumulation within the cathode framework.
Byung‐Man Kim +6 more
wiley +1 more source
Passively Q-Switched Ho,Pr:LiLuF4 Laser at 2.95 μm Using MoSe2
In this letter, we report a diode-end-pumped continuous wave (CW) and passively Q-switched Ho,Pr:LLF laser at 2.95 μm. A maximum CW output power of 98 mW was achieved.
Zhengyu Yan +8 more
doaj +1 more source
A scalable bottom‐up CVD methodology, based on liquid transition metal salt precursors, is presented for the controlled growth of two high‐quality MoSe2–WSe2 heterostructures (HSs): purely lateral (HS I) and hybrid lateral/vertical (HS II), by simply adjusting precursor concentration.
Md Tarik Hossain +16 more
wiley +1 more source
Demonstration of Diode-Pumped Yb:LaF3 and Tm,Ho:LaF3 Lasers
Diode-pumped solid-state lasers using novel Yb:LaF3 and Tm,Ho:LaF3 crystals as laser gain materials are demonstrated herein. The Yb:LaF3 and Tm,Ho:LaF3 crystals were grown using the Bridgman method.
Chun Li +3 more
doaj +1 more source
This review examines passive, active, and hybrid liquid manipulation strategies, highlighting hybrid approaches as an emerging route to reconcile energy efficiency with adaptive control. By actively reconstructing passive surfaces to store programmable interfacial energy, hybrid systems enable flexible yet low‐power liquid transport, with perspectives ...
Jiaqi Miao +3 more
wiley +1 more source
A Universal van der Waals Tunneling Injector for Monolayer CMOS
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho +17 more
wiley +1 more source

