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Direct-coupled distributed baseband amplifier IC's for 40-Gb/s optical communication

IEEE Journal of Solid-State Circuits, 1996
We have developed GaAs MESFET baseband amplifiers using novel distributed amplification schemes. The key feature of their design is a direct coupling architecture employing two kinds of new distributed DC transformers. One is a distributed level-shift circuit and the other is a distributed source coupled FET logic (SCFL) level transformer.
S. Kimura, Y. Imai, Y. Miyamoto
semanticscholar   +4 more sources

Cascade FinFET Direct Coupled Amplifier with Power Efficient Technique

2021 Innovations in Energy Management and Renewable Resources(52042), 2021
This paper presents cascade amplifier with parametric variation using CMOS technology which can be stimulated at lower technology node. Amplifiers used for high frequency operations and higher bandwidth designed by BJT technology undergoes various limitations like small scale integration, power consumption and high frequency operation.
Shreya Shree   +4 more
openaire   +2 more sources

A stabilized neon-tube direct-coupled amplifier

Electrical Engineering, 1941
IN recent years, the application of vacuum-tube amplifiers in many fields has greatly increased. Amplifiers capable of handling frequencies in the range of from 40 to 15,000 cycles per second are common, and in the many applications where it is necessary to amplify signals of frequencies much less than 40 cycles per second, the low-frequency response ...
W. Huggins
openaire   +2 more sources

A microstrip filter direct-coupled amplifier based on active coupling matrix synthesis

Frontiers of Information Technology & Electronic Engineering, 2021
This paper presents a methodology of designing an amplifier integrated with a microstrip filter using an active coupling matrix. The microstrip filter is directly coupled to the active device, and the integrated filter amplifier can achieve filtering as well as matching functionalities, simultaneously, eliminating the need for separate matching ...
Yang Gao   +5 more
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Direct-coupled amplifier using AlGaAs/GaAs ballistic collection transistors (BCTs)

10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988., 2003
The authors report on a direct-coupled amplifier using AlGaAs/GaAs heterojunction bipolar transistors with near-ballistic collection structure, called ballistic collection transistors (BCTs). The amplifier consists of two BCTs without level-shift diodes.
Y. Yamauchi, T. Ishibashi
openaire   +2 more sources

Direct Coupled Oscillograph Amplifier

Transactions of the American Institute of Electrical Engineers, 1947
Progress in the field of direct-inking oscillographs has made the development of a d-c amplifier very desirable. This paper describes the circuits used to obtain the characteristics desired in a d-c amplifier when it is used with a direct-inking oscillograph.
Dean R. Christian
openaire   +2 more sources

Direct-coupled amplifier for the measurement of small currents

Nuclear Instruments, 1958
Abstract Methods for the reduction of grid current noise and leakage currents in direct-coupled preamplifier circuits are discussed. It is shown that, by combining a cathode follower pream-plifier with a negative feedback output circuit, input grid resistors of very high value can be used.
B. Kendall
openaire   +2 more sources

A Wideband Direct Coupled Amplifier Utilizing a Fast/Slow Loop Concept

IEEE Transactions on Nuclear Science, 1981
A new direct coupled wideband amplifier, using thick film hybrid integrated circuit technology, has been designed and tested. A fast/slow loop configuration is used to provide a constant closed-loop voltage gain from dc to the closed-loop -3dB bandwidth of the fast stage. Analytical expressions are derived for the voltage transfer function.
K. W. Renner   +2 more
openaire   +2 more sources

A monolithic HEMT-HBT direct-coupled amplifier with active input matching

IEEE Microwave and Guided Wave Letters, 1996
We have achieved the first active input matching of a monolithic microwave integrated circuit through the use of a common-gate (CG) HEMT directly coupled to the input of an HBT Darlington feedback amplifier. The HEMT and HBT devices were monolithically integrated on the same chip using selective MBE.
K.W. Kobayaski   +4 more
openaire   +2 more sources

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