Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy
A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described.
Christopher T. Shelton +8 more
doaj +1 more source
Influence of misorientation angle and local dislocation density on β-phase distribution in Al 5xxx alloys. [PDF]
Desai Choundraj J, Kacher J.
europepmc +1 more source
The temperature dependence of fatigue behavior in nickel‐based superalloys is investigated through high‐resolution measurements of plastic localization. While increasing temperature reduces localization and enhances fatigue performance in René 88DT, Inconel 718 exhibits a sharp degradation at intermediate temperature due to intensified slip ...
M. Calvat +5 more
wiley +1 more source
The microstructure of plastically deformed Al-5.9%Mg-0.3%Sc-0.18%Zr alloy has been investigated. The severe plastic deformation has been performed by high pressure torsion straining (HPT) up to 15 revolutions at room temperature.
Gubicza, Jenő +5 more
core
Effects of grain size, orientation, and source density on dislocation configurational energy density
The effects of grain size, source density, and misorientations on the dislocation configurational energy area density are investigated using two-dimensional discrete dislocation plasticity.
Dunne, Fionn PE, Zheng, Zebang
core +1 more source
Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate. [PDF]
Liu H +16 more
europepmc +1 more source
Fatigue Crack Initiation and Growth in Nanocrystalline Ni at Multiple Length‐Scales
Overview of miniaturized in situ SEM fatigue setup and resultant fatigue crack growth data for nanocrystalline Ni. The presented study focuses on the analysis of fatigue crack growth rate (FCGR) in focused ion beam‐notched microcantilevers prepared from nanocrystalline (NC) Ni as a model material.
Igor Moravcik +7 more
wiley +1 more source
Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy
We have investigated the dislocation of GaN films grown by hydride vapor phase epitaxy (HVPE) on c-plane sapphire substrates using transmission electron microscopy (TEM), etch pit density (EPD) characteristics, and micro photoluminescence (PL).
Keunho Auh, Kyoyeol Lee
core +1 more source
Impact of Radio Frequency Plasma Power on the Structure, Crystallinity, Dislocation Density, and the Energy Band Gap of ZnO Nanostructure. [PDF]
Abdulrahman AF +3 more
europepmc +1 more source
Tailoring Functional Properties of Ti–Ni–Cu Shape Memory Alloy Thin Films for MEMS Actuators
A comprehensive study of critical parameters required to develop well‐performing Ti–Ni–Cu thin film shape memory alloy microactuators is provided. Materials science and device integration aspects are integrated by addressing structural and physical relationships using complementary characterization techniques as well as a practical fabrication solution
Elaheh Akbarnejad +6 more
wiley +1 more source

