Results 151 to 160 of about 32,621 (292)

Fast, vacancy-free climb of prismatic dislocation loops in bcc metals. [PDF]

Sci Rep, 2016
Swinburne TD, Arakawa K, Mori H, Yasuda H, Isshiki M, Mimura K, Uchikoshi M, Dudarev SL.   +7 more
europepmc   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Decoding the interstitial/vacancy nature of dislocation loops with their morphological fingerprints in face-centered cubic structure. [PDF]

Sci Adv
Ma K, Guo L, Dartois A, Meslin E, Ophus C, Décamps B, Fraczkiewicz A, Knowles AJ, Wang L, Tissot O, Prima F, Gao F, Deng H, Loyer-Prost M.   +13 more
europepmc   +1 more source

Tailoring the Morphology of MoS2 using RF Magnetron Sputtering for Enhanced Photoelectrochemical Water Splitting

Advanced Materials Interfaces, EarlyView.
Tailoring the morphology of MoS2 using RF Magnetron Sputtering for Enhanced Photoelectrochemical Water Splitting. ABSTRACT 2D molybdenum disulfide (MoS2) is a promising material for optoelectronic and photoelectrochemical (PEC) applications due to its unique properties.
Somnath Ladhane, Shruti Shah, Jyoti Thombare, Mansi Ingole, Swati Rahane, Priti Vairale, Vidya Doiphode, Yogesh Hase, Shashikant P. Patole, Sandesh Jadkar   +9 more
wiley   +1 more source

Accurate quantification of dislocation loops in complex functional alloys enabled by deep learning image analysis. [PDF]

Sci Rep
Bilyk T, Goryaeva AM, Marinica MC, Flament C, Sabathier C, Leroy E, Loyer-Prost M, Meslin E.   +7 more
europepmc   +1 more source

Topological Point Defects in SmC* Liquid Crystals Under Mechanical Disturbance

Advanced Materials Interfaces, EarlyView.
Tangetial air jet shear inducess island formation and nucleates topological point defects in uniform SmC films. Island bounded by edge dislocation loops shrink and transform into isolated point defects under continued shear. Mechanical perturbatio provides a controllable route for defect engineering in smectric liquid crystal thin films.
Gunganist Kongklad, Vandana Molahalli, Apichart Pattanaporkratana, Nattaporn Chattham   +3 more
wiley   +1 more source

Nanogeochronology of discordant zircon measured by atom probe microscopy of Pb-enriched dislocation loops. [PDF]

Sci Adv, 2016
Peterman EM, Reddy SM, Saxey DW, Snoeyenbos DR, Rickard WD, Fougerouse D, Kylander-Clark AR.   +6 more
europepmc   +1 more source

Elastomers Combining Damping Efficiency With Rapid Recovery

Advanced Materials Technologies, EarlyView.
Double network granular elastomers (DNGEs) combine high energy dissipation under both cyclic loading and high impact with rapid shape recovery. 3D printing enables the production of complex, customizable structures with tailored performance. Recyclable DNGEs retain their properties over multiple recycling cycles.
Eva Baur, Alain Molleyres, Esther Amstad
wiley   +1 more source

Strain-relief by single dislocation loops in calcite crystals grown on self-assembled monolayers. [PDF]

Nat Commun, 2016
Ihli J, Clark JN, Côté AS, Kim YY, Schenk AS, Kulak AN, Comyn TP, Chammas O, Harder RJ, Duffy DM, Robinson IK, Meldrum FC.   +11 more
europepmc   +1 more source

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

Advanced Materials Technologies, EarlyView.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li, Padma Srivari, Mari Honkanen, Turkka Salminen, Sayani Majumdar   +4 more
wiley   +1 more source