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Dislocation Loops in a‐Silicon Nitride

Journal of the American Ceramic Society, 1993
Thin foils of fully dense, but only partially transformed, hot pressed silicon nitride materials have been examined by high‐resolution transmisson electron microscopy. Large untransformed grains are seen to contain high densities of nanometer dimension, round or oval, textural features. Examination at high magnification shows thest
Chong‐Min Wang   +3 more
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Analysis of passing dislocation loops

Physica Status Solidi (a), 1974
The equilibrium configurations of passing dislocation loops on parallel slip planes have been determined as a function of applied stress using numerical techniques. It is shown that the stable equilibrium configurations of the loops correspond to minima in the energy surface determined by two loop radii, while the unstable equilibrium configurations ...
K. Sadananda, M. J. Marcinkowski
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Modeling of the kinetics of dislocation loops

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
Abstract The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the process simulator IMPACT-4. Their density
E. Lampin, V. Senez
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Image Simulation of Dislocation Loops

Proceedings, annual meeting, Electron Microscopy Society of America, 1976
Computer simulation of image contrast is a useful tool in the identification of lattice defects observed in the electron microscope. In order to obtain high quality simulated micrographs, it is necessary either to consume a considerable amount of computer time or to have the micrographs processed through special photographic devices.
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Dislocation loops in irradiated zirconium

Philosophical Magazine, 1966
Abstract Transmission electron microscope observations of damage in zirconium irradiated with krypton ions are reported. Dislocation loops were observed in irradiated and annealed specimens. These loops were interstitial in nature, fault free and were oriented near primary and secondary prism planes. The Burgers vectors were of the type b=(α/3) . It is
T. D. Gulden, I. M. Bernstein
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Dislocation loops in quenched aluminium

Philosophical Magazine, 1958
Abstract Electron transmission micrographs of polycrystalline aluminium quenched from ∼ 600°c into iced brine show that the specimens contain many dislocation loops with diameters of the order of several hundred A. Some of the loops are hoxagonal in shape, and occur on (111) planes, and have a Burgers vector ½ [110] not in the plane of the loop.
P. B. Hirsch   +3 more
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Circular edge dislocation loop

Czechoslovak Journal of Physics, 1960
A solution of the stress, deformation and deformation energy is given for an edge dislocation with its dislocation line having the shape of a circle in an unlimited isotropic medium. The possibility of using this solution in studying the dislocation loop in a crystal is discussed.
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The long-range forces between dislocation loops and dislocations

The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics, 1964
The long-range elastic interactions between dislocations and loops, both prismatic and shear, have been calculated for an isotropic medium.
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The climb of dislocation loops in zinc

Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1966
Abstract The annealing behaviour of faulted dislocation loops in quenched zinc has been studied with the aid of the electron microscope. On annealing, it is observed that some of the loops grow rather than shrink, and this has been attributed to the growth of zinc oxide on the foil surface, which results in the formation of vacancies.
P. S. Dobson, Raymond Edward Smallman
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Energy of dislocation loops in crystals

physica status solidi (a), 1986
Methods of calculating the energy of dislocation loops of arbitrary type and size as well as their interaction are proposed in a model of the solid state as a non-localized quasi-continuum. Also the model of a Gauss distribution of the dislocation density for a single dislocation is considered.
A. F. Vladimirov, E. N. Moos
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