Results 181 to 190 of about 5,425 (221)
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SPIE Proceedings, 2006
A comprehensive model for distributed Bragg Reflector (DBR) based on thin film optics is developed. Detailed refractive index calculations for GaN, AlN, AlGaN and InGaN are included in this model. Our model can predict DBR performances for index variations, layer thickness fluctuations, and different numbers of quarter-wave stack pairs in a DBR.
Dong-Xue Wang +3 more
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A comprehensive model for distributed Bragg Reflector (DBR) based on thin film optics is developed. Detailed refractive index calculations for GaN, AlN, AlGaN and InGaN are included in this model. Our model can predict DBR performances for index variations, layer thickness fluctuations, and different numbers of quarter-wave stack pairs in a DBR.
Dong-Xue Wang +3 more
openaire +1 more source
2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666), 2004
The use of a curved grating enable the combination of not only of the high-power of a broad stripe device and spectral control provided by a diffraction grating but also the output beam focusing in the plane of p-n-junction. The theoretical investigation of the c-DBR laser providing output beam focusing using the extended (3&3) transfer matrix ...
Y. Boucher, G.S. Sokolovskii
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The use of a curved grating enable the combination of not only of the high-power of a broad stripe device and spectral control provided by a diffraction grating but also the output beam focusing in the plane of p-n-junction. The theoretical investigation of the c-DBR laser providing output beam focusing using the extended (3&3) transfer matrix ...
Y. Boucher, G.S. Sokolovskii
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0.04 Hz relative optical-frequency stability in a 1.5 mu m distributed-Bragg-reflector (DBR) laser
IEEE Photonics Technology Letters, 1989The optical frequency of a 1.5- mu m distributed-Bragg-reflector (DBR) laser is stabilized against that of a master laser by heterodyne-type frequency locking with a phase-locked loop (PLL). Despite the laser's wide linewidth of 16 MHz, stable PLL operation with an optical hold-in range of 26 GHz is realized, and residual frequency fluctuations are ...
O. Ishida, H. Toba, Y. Tohmori
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SPIE Proceedings, 2000
A novel semiconductor/superlattice AlAs/[GaAs/AlAs] DBR has been obtained through replacing the Al x Ga 1-x As in the AlAs/Al x Ga 1-x As DBR with GaAs/AlAs superlattice. In experiment, a p-type of this kind of 19-period DBR has been grown by V80H MBE system.
Changling Yan +3 more
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A novel semiconductor/superlattice AlAs/[GaAs/AlAs] DBR has been obtained through replacing the Al x Ga 1-x As in the AlAs/Al x Ga 1-x As DBR with GaAs/AlAs superlattice. In experiment, a p-type of this kind of 19-period DBR has been grown by V80H MBE system.
Changling Yan +3 more
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2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2019
The authors report on the metal-organic vapor phase epitaxial (MOVPE) growth of all III-phosphide (AlInPInGaP) Distributed Bragg Reflectors (DBRs) on large GaAs substrates and their application for multijunction (MJ) solar cell device. DBRs with peak reflectance of 890 nm at GaAs bandgap energy were grown on top of inverted GaAs single junctions.
Kamran Forghani +3 more
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The authors report on the metal-organic vapor phase epitaxial (MOVPE) growth of all III-phosphide (AlInPInGaP) Distributed Bragg Reflectors (DBRs) on large GaAs substrates and their application for multijunction (MJ) solar cell device. DBRs with peak reflectance of 890 nm at GaAs bandgap energy were grown on top of inverted GaAs single junctions.
Kamran Forghani +3 more
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Design of GaInAs/InP membrane p-i-n photodiode with back-end distributed-Bragg-reflector (DBR)
CLEO Pacific Rim Conference, 2018A GalnAs/InP membrane p-i-n photodiode (PD) integrated with a back end DBR was theoretically investigated under a condition of the back reflection of −30dB. As the result, it was found that the 3dB bandwidth of 17 GHz can be obtained with the absorption section length of 12 μm.
Xu Zheng +4 more
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IET Irish Signals and Systems Conference (ISSC 2012), 2012
The paper reports some initial findings in the area of analysis and characterisation of fast switching lasers, specifically Sampled Grating Distributed Bragg Reflector (SG-DBR) lasers. The ability to track the phase of a laser in the moments immediately following a switching event is an important building block in the development of an efficient ...
J. Mountjoy, B. Cardiff, A.D. Fagan
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The paper reports some initial findings in the area of analysis and characterisation of fast switching lasers, specifically Sampled Grating Distributed Bragg Reflector (SG-DBR) lasers. The ability to track the phase of a laser in the moments immediately following a switching event is an important building block in the development of an efficient ...
J. Mountjoy, B. Cardiff, A.D. Fagan
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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest., 2005
We demonstrated a wide-wavelength (1533-1568 nm), high-output power (30 mW) operation in a short-cavity DBR laser array by incorporating an active single quantum well in DBR mirrors.
H. Arimoto +8 more
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We demonstrated a wide-wavelength (1533-1568 nm), high-output power (30 mW) operation in a short-cavity DBR laser array by incorporating an active single quantum well in DBR mirrors.
H. Arimoto +8 more
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A 1.65 μm three-section distributed Bragg reflector (DBR) laser for CH4 gas sensors
Journal of Semiconductors, 2013A 1.65-μm three-section distributed Bragg reflector (DBR) laser for CH4 gas sensors is reported. The DBR laser has a wide tunable range covering the R3 and R4 methane absorption line manifolds. The wavelength tunability properties, temperature stability and laser linewidth are characterized and analyzed.
Bin Niu +7 more
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Applied Physics Letters
Over the past few years, the demand for high-performance optoelectronic devices has intensified, and the limitations of silicon have become a critical bottleneck. To overcome these constraints while ensuring compatibility with existing CMOS technology, the search for alternative materials has become imperative.
Kritika Bhattacharya +6 more
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Over the past few years, the demand for high-performance optoelectronic devices has intensified, and the limitations of silicon have become a critical bottleneck. To overcome these constraints while ensuring compatibility with existing CMOS technology, the search for alternative materials has become imperative.
Kritika Bhattacharya +6 more
openaire +1 more source