Results 181 to 190 of about 76,187 (208)
Some of the next articles are maybe not open access.
A simple charge-based DLTS technique
Physica Status Solidi (a), 1981A charge-based DLTS technique is proposed for characterizing the interface states and, with some restrictions, the bulk traps in MIS, p–n, and Schottky-barrier diodes. The technique uses very simple devices — a mechanical chopper and a standard electrometer, but inspite of this a high sensitivity of the order of 108 eV−1 cm−2 can be reached when ...
K. I. Kirov, K. B. Radev
openaire +1 more source
Solid State Communications, 1981
Abstract It is shown theoretically that correlation methods of deep level transient spectroscopy give results sensitive to thermal capture effects. In thermal emission studies, the apparent trap depth depends on the free-carrier concentration.
openaire +1 more source
Abstract It is shown theoretically that correlation methods of deep level transient spectroscopy give results sensitive to thermal capture effects. In thermal emission studies, the apparent trap depth depends on the free-carrier concentration.
openaire +1 more source
A Modulated DLTS Method for Large Signal Analysis (C2-DLTS)
Japanese Journal of Applied Physics, 1981For the analysis of deep-level parameters in semiconductors, a new DLTS (Deep-Level Transient Spectroscopy) method has been proposed, in which a squaring device for the capacitance-signal processing is used with the conventional DLTS system. This method (C2-DLTS) is simple and is especially effective in the precise analysis of large signals due to ...
Hideyo Okushi, Yozo Tokumaru
openaire +1 more source
Acta Physica Academiae Scientiarum Hungaricae, 1980
A method and an apparatus used for measuring of the deep level content of semiconducting crystals are described. The investigation is based on the observation of capacitance (voltage) relaxation of diodes. The evaluation of the relaxation curve is the same as proposed first byLang [1], the so-called DLTS (deep level transient spectroscopy) method.
openaire +1 more source
A method and an apparatus used for measuring of the deep level content of semiconducting crystals are described. The investigation is based on the observation of capacitance (voltage) relaxation of diodes. The evaluation of the relaxation curve is the same as proposed first byLang [1], the so-called DLTS (deep level transient spectroscopy) method.
openaire +1 more source
2015
???????????????? ?????????????????? ?????????????????????????? ?????????????????????? ???????????????? ?????????????? ?? ?????????????? ???????????????????? ?????????????????????????? ??????????????????, ???????????????????? ???????????????????? ???????????????? ?????????????????????? ?? ?????????????????????????????????????? ?????????????? n-????????,
openaire +1 more source
???????????????? ?????????????????? ?????????????????????????? ?????????????????????? ???????????????? ?????????????? ?? ?????????????? ???????????????????? ?????????????????????????? ??????????????????, ???????????????????? ???????????????????? ???????????????? ?????????????????????? ?? ?????????????????????????????????????? ?????????????? n-????????,
openaire +1 more source