Results 11 to 20 of about 5,033,045 (217)

Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model [PDF]

open access: yesMicromachines
This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute.
Renyi Li   +3 more
doaj   +3 more sources

Multi-Objective Optimization Design of Doherty Power Amplifier Circuits Based on Non-Dominated Sorting Genetic Algorithm-II [PDF]

open access: yesMicromachines
Conventional optimization algorithms face challenges such as lengthy computation times, premature termination at non-convergent points, and the generation of local optima when addressing multi-objective optimization. A multi-objective optimization method
Hanbin Qu   +3 more
doaj   +2 more sources

Design of Ultra-Wideband Doherty Power Amplifier Using a Modified Combiner Integrated with Complex Combining Impedance [PDF]

open access: yesSensors, 2023
To be compatible with future wireless communication systems, it is very necessary to extend the bandwidth of the Doherty power amplifier (DPA). In this paper, a modified combiner integrated with a complex combining impedance is adopted to enable an ultra-
Jian Chen   +3 more
doaj   +2 more sources

A 3.2–3.6 GHz GaN Doherty Power Amplifier Module Based on a Compact Low-Loss Combiner [PDF]

open access: yesMicromachines
In this paper, a 3.2–3.6 GHz two-stage Doherty power amplifier (PA) module is proposed for fifth-generation (5G) massive multiple-input multiple-output (MIMO) base stations.
Xiyu Wang   +6 more
doaj   +2 more sources

A Comparative Analysis of Doherty and Outphasing MMIC GaN Power Amplifiers for 5G Applications [PDF]

open access: yesMicromachines, 2023
A comparison between a fully integrated Doherty power amplifier (DPA) and outphasing power amplifier (OPA) for fifth Generation (5G) wireless communications is presented in this paper. Both amplifiers are integrated using pHEMT transistors from the OMMIC’
Victoria Díez-Acereda   +3 more
doaj   +2 more sources

Design Of A Doherty Power Amplifier For GSM Systems

open access: yesTikrit Journal of Engineering Sciences, 2013
This paper presents the design and analysis of Doherty power amplifier. The Doherty amplifier is used in  a base station for mobile system because of its high efficiency.
Saad Wasmi Osman
doaj   +1 more source

A 79 GHz SiGe Doherty Power Amplifier Suitable for Next-Generation Automotive Radar

open access: yesIEEE Journal of Microwaves
The number of environment-detecting sensors inside cars continuously increases, to enable failsafe autonomous driving. With more sensors, the probability of performance degrading interferences increases.
Jan Schoepfel   +4 more
doaj   +2 more sources

Doherty Power Amplifier for LTE-Advanced Systems [PDF]

open access: yesTechnologies, 2019
The design and implementation of an asymmetrical Doherty power amplifier are discussed, where two Cree GaN High Electron Mobility Transistors (HEMTs) devices are used for designing an asymmetrical Doherty power amplifier to achieve saturated power of 48 ...
Ahmed M. Abdulkhaleq   +7 more
doaj   +2 more sources

Doherty Amplifier Linearization in Experiments by Digital Injection Methods [PDF]

open access: yes, 2021
In this paper, the experimental verification of two linearization methods applied on a broadband two-way microstrip Doherty amplifier is performed. The laboratory set-ups are formed to generate the baseband nonlinear linearization signals of the second ...
Budimir, D.   +3 more
core   +1 more source

Doherty amplifier linearization by digital injection methods [PDF]

open access: yes, 2022
Verification of two linearization methods, applied on asymmetrical two-way microstrip Doherty amplifier in experiment and on symmetrical two-way Doherty amplifier in simulation, is performed in this paper.
Djoric, Aleksandra   +7 more
core   +1 more source

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