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A 22-44 GHz 28nm FD-SOI CMOS 5G Doherty Power Amplifier with Wideband PAE6dBPBO Enhancement and 3:1 VSWR Resiliency

Radio Frequency Integrated Circuits Symposium
This paper presents a broadband 5G power amplifier robust to VSWR variations and featuring high efficiency up to deep power back-off in 28nm FD-SOI CMOS technology.
G. Diverrez   +3 more
semanticscholar   +1 more source

Design of Wideband Doherty Power Amplifier Using Inverse Continuous Class-F Mode

IEEE Transactions on Circuits and Systems - II - Express Briefs
This brief presents the theory and design method of a wideband Doherty power amplifier (DPA) using inverse continuous class-F mode (ICFM). It is illustrated that continuous class-F−1 mode impedance condition can be achieved for Doherty operation using a ...
Meng Ren   +7 more
semanticscholar   +1 more source

Envelope-tracking-based Doherty power amplifier

International Journal of Electronics, 2010
From the instantaneous efficiency plot, it is observed that the conventional 2-stage Doherty power amplifier (DPA) with high upper power dynamic range (>12 dB) suffers from a substantial dip in the middle of the upper power regime, thus reducing the average efficiency.
Thian, Mury, Gardner, Peter
openaire   +2 more sources

Design of a Fully Integrated Wideband Continuous-Mode Asymmetrical Doherty Power Amplifier in GaN-on-SiC HEMT Technology

IEEE Transactions on Circuits and Systems - II - Express Briefs
In this brief, a novel continuous-mode asymmetrical Doherty power amplifier (CM-ADPA) is proposed. It is illustrated that by applying complex impedance at the power combining node, the continuous-mode impedance condition can be obtained for the main ...
Jingyuan Zhang   +4 more
semanticscholar   +1 more source

Doherty-to-Balanced Switchable Power Amplifier

2019 IEEE MTT-S International Microwave Symposium (IMS), 2019
A novel Doherty-to-balanced (D2B) switchable power amplifiers (PAs) architecture based on branch-line quadrature hybrid couplers is presented. It is for the first time unveiled that by switching the 50-Ω loading at isolation port to a short circuit to ground, the balanced amplifier can be fully converted to a Doherty PA.
Haifeng Lyu, Yuchen Cao, Kenle Chen
openaire   +1 more source

Fully integrated LTE Doherty power amplifier

2013 International Semiconductor Conference Dresden - Grenoble (ISCDG), 2013
This paper demonstrates a fully integrated Doherty power amplifier for the LTE standard. The Doherty power amplifier is fully integrated adopting a 0.25 μm SiGe BiCMOS technology. The quarter wave transmission line is implemented by lumped element components to save chip area.
Jinshu Zhao, Robert Wolf, Frank Ellinger
openaire   +1 more source

Integrated 5-W GaN Doherty Power Amplifier for 5G FR1 Bands with 19 dB Gain Over a 41% Bandwidth

Intelligent Memory Systems
This paper presents the design of a Doherty power amplifier for 5G applications in the FR1 5G bands, implemented with WIN's 150 nm GaN/SiC HEMT technology.
Giulia Bartolotti   +2 more
semanticscholar   +1 more source

The Doherty Power Amplifier: Design strategy

2015 IEEE Thirty Fifth Central American and Panama Convention (CONCAPAN XXXV), 2015
This paper shows a proposal of methodology for designing Doherty Power Amplifiers (DPAs) with arbitrary output-back-off (OBO), main and peak devices. As a demonstration, a 7.5dB OBO DPA has been designed, using two devices from Cree Inc, and simulated in Advanced Design System 2014.
Jorge Julián Moreno-Rubio   +1 more
openaire   +1 more source

32.3 A Load-Variation-Tolerant Doherty Power Amplifier with Dual-Adaptive-Bias Scheme for 5G Handsets

IEEE International Solid-State Circuits Conference
In modern mobile communications, a high peak-to-average power ratio (PAPR) and a broadband bandwidth are essential for realizing high data-rate communication links. However, a high amplifier efficiency is crucial for a long battery life.
Shohei Imai   +3 more
semanticscholar   +1 more source

A 70% GaN doherty power amplifier

2016 International Conference on Communication and Signal Processing (ICCSP), 2016
This paper discusses the design of wideband Doherty amplifier. Design strategy basically depends upon the elimination of bandwidth constraints in basic Doherty amplifier as pointed by the investigation, which are quarter wave impedance transformer and capacitance at the transistor output terminal.
T. S. Jayadeva, C. PuttaMadappa
openaire   +1 more source

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