Results 231 to 240 of about 134,248 (260)
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Analysis of Average Power Tracking Doherty Power Amplifier
IEEE Microwave and Wireless Components Letters, 2015An average power tracking (APT) Doherty power amplifier (PA) is analyzed in terms of its biasing voltage condition, efficiency, and output power. And the drain and gate bias voltages are optimized for operation at different output power conditions.
Park, Y, Lee, J, Kim, S, Minn, D, Kim, B
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A Saturated Doherty Power Amplifier Based On Saturated Amplifier
IEEE Microwave and Wireless Components Letters, 2010A saturated Doherty power amplifier (PA) based on the saturated PA tuned by the self-generated harmonic currents is presented. When driven with mobile WiMAX 1FA signal, this Doherty PA demonstrates high efficiency performance (average 57%) over the WiMAX band from 2.5 GHz to 2.7 GHz.
Kim, J, Son, J, Moon, J, Kim, B
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Wideband harmonically-tuned GaN Doherty power amplifier
2012 IEEE/MTT-S International Microwave Symposium Digest, 2012This paper presents the design of a wideband harmonically-tuned Doherty amplifier. The frequency-dependent back-off efficiency degradation was minimized by compensating the effect of the frequency-sensitive impedance inverters over the design band.
Khaled Bathich, Georg Boeck
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Design of broadband GaN doherty power amplifiers
2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), 2014This paper presents a modified Doherty power amplifier (DPA) architecture to release bandwidth limitation of the conventional DPA. The proposed DPA structure eliminates two quarter wavelength impedance inverters used in the conventional DPAs (one is after the output matching network of the carrier amplifier and the other one is before the load of the ...
Jin Shao +6 more
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High-efficiency Doherty power amplifiers
2021Andrei Grebennikov, Marc J. Franco
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Doherty power amplifier and GaN technology
2010In this paper, the features of GaN HEMT technology and Doherty Power Amplifier architecture will be investigated, as a possible answer for the stringent requirements of the next generation of wireless systems. In particular, the attention will be focused on the capabilities and the relevant drawbacks of a GaN HEMT technology when designing DPAs.
COLANTONIO, PAOLO +3 more
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IEEE Transactions on Microwave Theory and Techniques, 2015
Jingzhou Pang, Songbai He, Chaoyi Huang
exaly
Jingzhou Pang, Songbai He, Chaoyi Huang
exaly

