Results 201 to 210 of about 2,078,957 (283)
Probabilistic Computing via Gate‐Tunable Random Telegraph Noise
Intrinsic random telegraph noise in metal–oxide–semiconductor field‐effect transistors is harnessed to create gate‐tunable probabilistic bits. By modulating carrier‐trapping dynamics, the device produces stochastic binary outputs with a continuous bias‐to‐probability transfer.
Gyungwon Yun +8 more
wiley +1 more source
Tellurium substitution for phosphorus in violet phosphorus significantly reduces contact resistance, enhancing FET performance under ambient conditions. ABSTRACT Two‐dimensional materials have attracted much attention in various research fields. The phosphorene structures with various allotropes, another type of elemental 2D materials after graphene ...
Zhuorui Wen +12 more
wiley +1 more source
This study investigates the effects of thermal deposition rate on next‐generation p‐type amorphous oxide semiconductor SeTe–TeOx films. Deposition rate governs the chemical states, microstructure, and electrical characteristics of the films, resulting in tunable device properties.
Seongmo Kang +8 more
wiley +1 more source
Guided by spatial transcriptomics and clinical validation, a threaded microneedle platform enables precise layer‐specific delivery across the dermis and subcutaneous tissue. By addressing distinct pathogenic remodeling in different skin layers, this strategy coordinates compartment‐specific intervention, restores tissue architecture, and offers a ...
Fangzhou Xie +14 more
wiley +1 more source
Non‐invasively quantitative Raman imaging with stacking‐induced charge transfer‐enhanced Raman scattering (SICTERS) enables accurate measurement of concentrations and pharmacokinetic modeling of lymphatic transport of micelles in mice. This platform allows dynamic analysis of nanoparticle transport and underpins the design of effective lymph node ...
Yunlu Li +6 more
wiley +1 more source
Mechanisms of Temperature‐Dependent Hysteresis in Freestanding BaTiO3/MoS2 Heterostructures
Freestanding ferroelectric BaTiO3 membranes are combined with monolayer MoS2 into 2D field‐effect transistors. At room temperature they provide ultrahigh‐κ gating with steep subthreshold swing and minimal hysteresis. Upon cooling, strong ferroelectric switching produces two stable memory states with long retention times.
Thomas Pucher +7 more
wiley +1 more source
Organic electrochemical transistors bridge biological ionic signaling and neuromorphic computation through volumetric electrochemical gating. This review connects Organic mixed ionic–electronic conductor materials, device architectures, and manufacturing technologies to show how geometry, ion transport, and fabrication strategies program plasticity ...
Hyunjin Lee +5 more
wiley +1 more source
The WTP is a key component of static drainage PEMFCs, enabling cathode water removal and gas sealing through capillary forces. This work investigates the mechanisms governing WTP drainage and sealing performance and develops predictive approaches for WTP design optimization.
Mengdi Guo +3 more
wiley +1 more source
Energy‐harvesting‐integrated sensors couple ambient energy conversion with sensing, processing, and wireless communication. This review organizes recent progress through integration architectures and operating principles, revisiting co‐packaged, monolithic, and co‐functional designs together with always‐on, event‐driven, and multi‐modal sensing modes ...
Taehyun Park +5 more
wiley +1 more source
A Dual‐Programmable 2M NOR Flash Architecture for Energy‐Efficient In‐Memory Computing
In conventional NOR Flash, the access transistor occupies area but stores no information. Here, it is repurposed as a programmable second memory device that plays two functional roles: an analog memory element that lowers the minimum read current from 72.7 nA to 4.22 pA, and a current‐path gating element enabling true‐off pruning and current‐range ...
Suhan Kim +4 more
wiley +1 more source

