Results 221 to 230 of about 8,734,078 (281)

Singletrack: an algorithm for improving memory consumption and performance of gap-affine sequence alignment. [PDF]

open access: yesBioinformatics
López-Villellas L   +7 more
europepmc   +1 more source

Toward Pore‐Engineered 3D‐Printed Materials for Sorption Water Harvesting, Interfacial Evaporation, and Radiative Cooling

open access: yesAdvanced Materials, EarlyView.
Water harvesting, radiative cooling, and interfacial solar evaporation are fundamentally governed by coupled heat, mass, and light transport processes. These processes are mediated by pore architecture, including pore size, connectivity, and hierarchical organization.
Dejan J. Trajkovski   +5 more
wiley   +1 more source

Topological Spin‐Texture Transitions in van der Waals Magnets Revealed by X‐Ray Fourier Transform Holography

open access: yesAdvanced Materials, EarlyView.
Applied here for the first time to a 2D material, high‐resolution synchrotron x‐ray Fourier transform holography directly images topological spin textures in Fe3GeTe2. Combined with atomistic tight‐binding simulations including itinerant electrons and Rashba spin‐orbit coupling, the approach reveals labyrinth, skyrmion, and mixed phases, and uncovers ...
Sourav Chowdhury   +16 more
wiley   +1 more source

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

open access: yesAdvanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh   +5 more
wiley   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

open access: yesAdvanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh   +9 more
wiley   +1 more source

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