Results 171 to 180 of about 69,844 (255)
The characteristics of a vertical floating gate heterostructure transistor device that exhibits neuromorphic potentiation under visible light illumination are investigated. Due to spectrally‐tuned absorbance properties of each thin film layer and introduction of tunneling dielectric, the device enables wavelength‐selective tuning of synaptic plasticity
Seungme Kang +12 more
wiley +1 more source
Faddeev-Jackiw Quantization of the Gauge Invariant Self-dual Fields Relative to String Theory [PDF]
Leng Liao, Yong-Chang Huang
openalex +1 more source
Geometrical frustration in nonlinear mechanics of screw dislocation. [PDF]
Kobayashi S, Tarumi R.
europepmc +1 more source
Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa +6 more
wiley +1 more source
Constraint structure of the generalized Proca model in the Lagrangian formalism. [PDF]
Molaee Z, Shirzad A.
europepmc +1 more source
Ultrathin AlOxHy interlayers between aluminum films and polymer substrates significantly improve electro‐mechanical properties of flexible thin film systems. By precisely controlling interlayer thickness using atomic layer deposition, this study identifies an optimal interlayer thickness of 5–10 nm that enhances ductility and delays cracking.
Johanna Byloff +9 more
wiley +1 more source
Hyperunified field theory and gravitational gauge–geometry duality [PDF]
Yue-Liang Wu
openalex +1 more source
Exploring potential hidden aspects of quantum field theory through numerical solution of the Klein-Gordon equation using the Yee algorithm. [PDF]
Honarbakhsh B.
europepmc +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source

