Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics. [PDF]
Peng Y +9 more
europepmc +1 more source
Highly transparent dye-sensitized solar cells with UV-absorbing fluorene dyes and tetramethylthiourea electrolytes. [PDF]
Marsya MA +5 more
europepmc +1 more source
Size-Dependent Emission Enhancement in Deep-Ultraviolet AlGaN Microrods. [PDF]
Sun X +11 more
europepmc +1 more source
Spectroscopic Ellipsometry and Correlated Studies of AlGaN-GaN HEMTs Prepared by MOCVD. [PDF]
Yang Y +10 more
europepmc +1 more source
Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission. [PDF]
Chu C +7 more
europepmc +1 more source
Reliability Estimation and Failure Analysis of LEDs with Various Currents and Correlated Color Temperatures for Identical Power Ratings: A Comparative Study. [PDF]
Lokesh J +3 more
europepmc +1 more source
Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters. [PDF]
Wang J +11 more
europepmc +1 more source
Synergistic Band-Gap Engineering and Visible-Light Activation in Fe, La Doped ZnO Nanoparticles. [PDF]
Parida P +7 more
europepmc +1 more source
Study on Light Extraction Efficiency of Deep UV-LEDs
本研究利用奈米壓印技術在藍寶石基板製作奈米圖形化結構(Nano-Pattern Sapphire Substrate, NPSS)應用於覆晶式深紫外光發光二極體(Deep Ultraviolet Light-Emitting Diode, DUV-LED),藉此改善元件光萃取效率(Light-Extraction Efficiency, LEE)。 使用TracePro模擬軟體進行光線追跡的模擬探討不同幾何圖形結構對於覆晶式DUV-LED的光提取效率。元件結構使用Ni/Au作為接觸層和Al作為反射鏡 ...
賴彥丞, Yan-Chung Lai
core
Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft. [PDF]
Liu X +10 more
europepmc +1 more source

