Results 201 to 210 of about 8,247 (230)

Screen the Polarization Induced Electric Field Within the MQWs for DUV LEDs

2019
This chapter discusses and presents different designs to screen the polarization level in the quantum wells for [0001]-oriented DUV LEDs. By doing so, the quantum confined Stark effect (QCSE) can be decreased. We suggest a simple way to reduce the QCSE by adopting Si-doped quantum barriers.
Zi-Hui Zhang, Chunshuang Chu, Kangkai Tian, Yonghui Zhang   +3 more
openaire   +1 more source

Ladungsträgertransport und Ladungsträgerrekombination in AlGaN-basierten DUV-LEDs

Diese Arbeit befasst sich mit der Analyse der Rekombination sowie des Transports von Ladungsträgern in AlGaN-basierten lichtemittierenden Dioden (LEDs) mit Emissionswellenlängen (λ) im tiefen ultravioletten (UV) Spektralbereich. Im ersten Teil der Arbeit wurde die vertikale elektrische Leitfähigkeit (σ_V) von Mg-dotierten p-AlGaN-Schichten sowie von ...
openaire   +1 more source

Efficient DUV micro-LED and arrays for various applications

2023 IEEE Photonics Conference (IPC), 2023
Huabin Yu, Muhammad Hunain Memon, Shudan Xiao, Haiding Sun   +3 more
openaire   +1 more source

Enhancing light extraction efficiency of 242 nm DUV micro-LEDs via hybrid nanorod arrays

Optics Letters
Deep-ultraviolet (DUV) micro-LEDs are pivotal for applications such as maskless lithography and germicidal disinfection. However, improving light extraction efficiency (LEE) remains a significant challenge. This study presents a novel, to the best of our knowledge, strategy to enhance LEE by employing gold thin-film annealing and dry-etching techniques
Licai Zhu, Shunpeng Lu, Ke Jiang, Jianwei Ben, Shanli Zhang, Jialong Hao, Jiale Peng, Ruojia Zhang, Dabing Li, Xiaojuan Sun   +9 more
openaire   +2 more sources

Monolithic Integration of DUV Micro-LED Array with Photodetectors for Maskless Photolithography

CLEO 2025
We propose a vertical integrated architecture of deep ultraviolet micro-LED array and photodetector, and construct a self-stabilizing feedback system to ensure the stability of the device, further successfully applying to the maskless photolithography system.
Jikai Yao, Huabin Yu, Muhammad Hunain Memon, Wei Chen, Yuchen Du, Haiding Sun   +5 more
openaire   +1 more source

High-speed solar-blind optical wireless communication enabled by DUV LED

Light-Emitting Devices, Materials, and Applications XXVI, 2022
Yuki Yoshida, Kazunobu Kojima, Masaki Shiraiwa, Atsushi Kanno, Akira Hirano, Yosuke Nagasawa, Masamichi Ippommatsu, Naokatsu Yamamoto, Shigefusa F. Chichibu, Yoshinari Awaji   +9 more
openaire   +1 more source

Low p-contact resistance InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates

Applied Physics Letters
Better wall plug efficiency of deep-ultraviolet light emitting diodes (DUV-LEDs) requires simultaneous low resistivity p-type and n-type contacts, which is a challenging problem. In this study, the co-optimization of p-InGaN and n-AlGaN contacts for DUV LEDs is investigated.
Hsin-Wei S. Huang, Shivali Agrawal, Debaditya Bhattacharya, Vladimir Protasenko, Huili Grace Xing, Debdeep Jena   +5 more
openaire   +1 more source

DUV-LED packaging using high density TSV in silicon cavity and laser-glass-frit-bonded UV transmitting glass cap

Sensors and Actuators A: Physical, 2022
Yukio Suzuki, Shuji Tanaka
exaly  

Tunnelling assisted by Si-doped n-AlGaN layer on the p-side of 254 nm DUV LED

Optical and Quantum Electronics, 2023
Fang Wang
exaly  

High Performance of a Non-Polar AlGaN-Based DUV-LED with a Quaternary Superlattice Electron Blocking Layer

Journal of Electronic Materials, 2022
Qian
exaly