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Enhancing WPE for AlGaN-based DUV LEDs using a hybrid heterostructure and recessed electrodes design
Optics LettersOne of the key factors limiting the wall-plug efficiency (WPE) of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) is the high voltage drop over the n-contact on the Al-rich n-AlGaN. Here, we have proposed a hybrid scheme of n-AlGaN heterostructure and recessed cathodes to optimize the n-contact.
Yuxuan Chen +11 more
openaire +2 more sources
Semi-inorganic Packaging Technology of DUV-LEDs with High-vapor Tightness
Chinese Journal of Luminescence, 2023Chuiming WAN +5 more
openaire +1 more source
Characterization of Oxide Layers on AlGaN Based DUV LEDs by TEM/STEM Analysis
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2022Jong-Shing Bow +7 more
openaire +1 more source
Tunnelling assisted by Si-doped n-AlGaN layer on the p-side of 254 nm DUV LED
Optical and Quantum Electronics, 2023M Ajmal Khan, Malika Rani, Liu Yuhuai
exaly
Light extraction structure formation process in DUV-LEDs
Gallium Nitride Materials and Devices XXIYoshio Honda +8 more
openaire +1 more source
Reliability Modeling of High Power DUV LED Chips Based on New Thin Film Packaging Technology
2023Xin Tan, Haitao Ma, Hongwei Liang
exaly

