Results 181 to 190 of about 8,247 (230)

Current induced degradation study on state of the art DUV LEDs

Microelectronics Reliability, 2018
Abstract We present the first comprehensive study of the degradation of 16 mW state of the art UVC LEDs emitting at 280 nm. The study, based on combined electrical and spectral characterization, allows to identify different degradation regimes and mechanisms, and to formulate hypotheses on their origin.
Trivellin, N., Monti, D., De Santi, C., Buffolo, M., Meneghesso, G., Zanoni, E., Meneghini, M.   +6 more
openaire   +3 more sources

Enhanced Light Extraction From DUV-LEDs by AlN-Doped Fluoropolymer Encapsulation

IEEE Photonics Technology Letters, 2017
AlN-doped fluoropolymer encapsulation layer was proposed for deep-ultraviolet light-emitting diodes. The proposed method can significantly enhance the light extraction from the chip-on-board packaging structure, which is attributed to the increased refractive index and light scattering ability of the encapsulant layer by the doping of AlN nanoparticles
Yang Peng, Xin Guo, Renli Liang, Hao Cheng, Mingxiang Chen   +4 more
openalex   +2 more sources

On the origin of the enhanced light extraction efficiency of DUV LED by using inclined sidewalls

Optics Letters
It is known that light extraction efficiency (LEE) for AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) can be enhanced by using an inclined sidewall of mesa. However, the reported optimal inclined angles are different. In this work, to explore the origin for enhancing the LEE of DUV LED by using inclined sidewalls, we investigate the ...
Liu Wang, Tong Jia, Zhaoqiang Liu, Chunshuang Chu, KangKai Tian, Yonghui Zhang, Zi-Hui Zhang   +6 more
openaire   +4 more sources

Geopolymer adhesives for DUV LED packaging: Synthesis and bonding mechanism

Journal of Alloys and Compounds
Qinglei Sun, Can Cui, Jianing Li, Fuchu Liu, Boyuan Chen, Yingxia Liu, King-Ning Tu, Hongyong Jiang   +7 more
openaire   +3 more sources

Development of AlGaN DUV-LED

2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 2013
We report on development for commercial production of 50mW class AlGaN based deep ultraviolet light-emitting diodes (DUVLED) with wave length ranging 255 to 355 nm. DUVLED have about 10% EQE and over 10000 hours life time.
Masamichi Ippommatsu, Akira Hirano, Isamu Akasaki, Hiroshi Amano   +3 more
openaire   +1 more source

Hermetic SMD-type reflector cavity packaging for DUV LEDs

Light-Emitting Devices, Materials, and Applications XXIV, 2020
Packaging materials usable for DUV-LEDs are limited as most organic materials are affected by DUV radiation. Packages used are TO-packages or 3D-structured ceramic housings with quartz lid. Due to DUV-LEDs radiating up to 50% of their light to the sides a significant share is lost.
Ulli Hansen, Simon Maus, Oliver Gyenge, Xiaodong Hu, Marco Queisser, Sebastian Marx   +5 more
openaire   +1 more source

High-reflection Al-plated DPC ceramic substrate for AlGaN-based DUV LED packaging

Chinese Journal of Liquid Crystal and Displays, 2020
Yu-ming YANG, Yan LI, Huai-wen ZHENG, Fei YU, Hua YANG, Xiao-yan YI, Jun-xi WANG, Jin-min LI   +7 more
openaire   +3 more sources

Development of DUV-LED grown on high-temperature annealed AlN template

Gallium Nitride Materials and Devices XVI, 2021
A combination of the sputtering deposition and high-temperature annealing is a promising technique for preparing low-dislocation-density AlN templates. In this talk, MOVPE growth behavior of AlGaN films grown on the annealed AlN templates and on conventional MOVPE-grown AlN templates was comprehensively discussed.
Kenjiro Uesugi, Ding Wang, Kanako Shojiki, Shigeyuki Kuboya, Hideto Miyake   +4 more
openaire   +1 more source

Light extraction analysis of AlGaN nanowires with inverse taper for DUV LEDs

Light-Emitting Devices, Materials, and Applications XXV, 2021
Planar deep-ultraviolet (DUV) light emitting diodes (LEDs) suffer from extremely low external quantum efficiencies (EQEs) due to poor light extraction efficiencies (LEE) which are often less than 1%, hindering their widespread use. In AlGaN DUV LEDs with high Al-content, the positioning of the valence subbands leads to dominant transverse magnetic (TM)-
Bryan Melanson, Cheng Liu, Matthew Hartensveld, Jing Zhang   +3 more
openaire   +1 more source

Degradation processes of 280 nm high power DUV LEDs: impact on parasitic luminescence [PDF]

Japanese Journal of Applied Physics, 2019
With this work we report on characterization and reliability analysis of 280 nm high power commercial LEDs emitting 18 mW at 200 mA, with a peak wavelength of 280 nm. Spectral characterization reports the presence of a main emission peak and a sideband peak separated by 0.8 eV.
Trivellin N., Monti D., Piva F., Buffolo M., De Santi C., Zanoni E., Meneghesso G., Meneghini M.   +7 more
openaire   +1 more source