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Enhancing WPE for AlGaN-based DUV LEDs using a hybrid heterostructure and recessed electrodes design

Optics Letters
One of the key factors limiting the wall-plug efficiency (WPE) of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) is the high voltage drop over the n-contact on the Al-rich n-AlGaN. Here, we have proposed a hybrid scheme of n-AlGaN heterostructure and recessed cathodes to optimize the n-contact.
Yuxuan Chen   +11 more
openaire   +2 more sources

High Performance of a Non-Polar AlGaN-Based DUV-LED with a Quaternary Superlattice Electron Blocking Layer

Journal of Electronic Materials, 2022
Qian Dai, Xiong Zhang, Xianghua Zeng
exaly  

Semi-inorganic Packaging Technology of DUV-LEDs with High-vapor Tightness

Chinese Journal of Luminescence, 2023
Chuiming WAN   +5 more
openaire   +1 more source

Characterization of Oxide Layers on AlGaN Based DUV LEDs by TEM/STEM Analysis

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2022
Jong-Shing Bow   +7 more
openaire   +1 more source

Tunnelling assisted by Si-doped n-AlGaN layer on the p-side of 254 nm DUV LED

Optical and Quantum Electronics, 2023
M Ajmal Khan, Malika Rani, Liu Yuhuai
exaly  

Light extraction structure formation process in DUV-LEDs

Gallium Nitride Materials and Devices XXI
Yoshio Honda   +8 more
openaire   +1 more source

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