Results 171 to 180 of about 1,029 (198)
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Improve the Hole Injection to Enhance the IQE for DUV LEDs
2019The very low doping efficiency for the p-type Al-rich AlGaN layers indicates that the hole injection capability for DUV LEDs can be poor. Therefore, we ought to investigate the approaches to enable high-efficiency hole injection. In this chapter, we propose novel DUV LED architectures to make “hot” holes, increase the hole concentration in the p-type ...
Zi-Hui Zhang +3 more
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Increase the IQE by Improving the Crystalline Quality for DUV LEDs
2019The roadmap for AlGaN based DUV LEDs is similar to that for InGaN based visible LEDs, such that the success of achieving high crystalline-quality epilayers is the precondition for fabricating high-brightness DUV LEDs. This chapter will review the most adopted technologies for growing high-quality Al-rich AlGaN films, which is regarded as the milestone ...
Zi-Hui Zhang +3 more
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Enhanced Light Extraction From DUV-LEDs by AlN-Doped Fluoropolymer Encapsulation
IEEE Photonics Technology Letters, 2017AlN-doped fluoropolymer encapsulation layer was proposed for deep-ultraviolet light-emitting diodes. The proposed method can significantly enhance the light extraction from the chip-on-board packaging structure, which is attributed to the increased refractive index and light scattering ability of the encapsulant layer by the doping of AlN nanoparticles
Yang Peng +4 more
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On the origin of the enhanced light extraction efficiency of DUV LED by using inclined sidewalls
Optics LettersIt is known that light extraction efficiency (LEE) for AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) can be enhanced by using an inclined sidewall of mesa. However, the reported optimal inclined angles are different. In this work, to explore the origin for enhancing the LEE of DUV LED by using inclined sidewalls, we investigate the ...
Liu Wang +6 more
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Screen the Polarization Induced Electric Field Within the MQWs for DUV LEDs
2019This chapter discusses and presents different designs to screen the polarization level in the quantum wells for [0001]-oriented DUV LEDs. By doing so, the quantum confined Stark effect (QCSE) can be decreased. We suggest a simple way to reduce the QCSE by adopting Si-doped quantum barriers.
Zi-Hui Zhang +3 more
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Modulating the Layer Resistivity by Band-Engineering to Improve the Current Spreading for DUV LEDs
IEEE Photonics Technology Letters, 2019In this letter, we propose to enhance the hole injection efficiency by modulating the layer resistivity in the n-AlGaN layer for 280 nm AlGaN based deep ultraviolet light-emitting diodes (DUV LEDs). The layer resistivity for the n-AlGaN layer is controlled by generating the energy barriers, which is enabled by locally engineering the energy band gap ...
Chunshuang Chu +9 more
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2017 18th International Conference on Electronic Packaging Technology (ICEPT), 2017
For deep ultraviolet light emitting diodes (DUV-LEDs) packaging, the choice of substrate directly affected its performance and reliability. In this paper, a structure was proposed to promote thermal management and lifespan of DUV-LEDs by introducing the ceramic substrate with copper filled thermal hole.
Linlin Xu +4 more
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For deep ultraviolet light emitting diodes (DUV-LEDs) packaging, the choice of substrate directly affected its performance and reliability. In this paper, a structure was proposed to promote thermal management and lifespan of DUV-LEDs by introducing the ceramic substrate with copper filled thermal hole.
Linlin Xu +4 more
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Monolithic Integration of DUV Micro-LED Array with Photodetectors for Maskless Photolithography
CLEO 2025We propose a vertical integrated architecture of deep ultraviolet micro-LED array and photodetector, and construct a self-stabilizing feedback system to ensure the stability of the device, further successfully applying to the maskless photolithography system.
Jikai Yao +5 more
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Efficient DUV micro-LED and arrays for various applications
2023 IEEE Photonics Conference (IPC), 2023Huabin Yu +3 more
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Ladungsträgertransport und Ladungsträgerrekombination in AlGaN-basierten DUV-LEDs
Diese Arbeit befasst sich mit der Analyse der Rekombination sowie des Transports von Ladungsträgern in AlGaN-basierten lichtemittierenden Dioden (LEDs) mit Emissionswellenlängen (λ) im tiefen ultravioletten (UV) Spektralbereich. Im ersten Teil der Arbeit wurde die vertikale elektrische Leitfähigkeit (σ_V) von Mg-dotierten p-AlGaN-Schichten sowie von ...openaire +1 more source