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2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 2013 We report on development for commercial production of 50mW class AlGaN based deep ultraviolet light-emitting diodes (DUVLED) with wave length ranging 255 to 355 nm. DUVLED have about 10% EQE and over 10000 hours life time.
Masamichi Ippommatsu +3 more
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Current induced degradation study on state of the art DUV LEDs
Microelectronics Reliability, 2018Abstract We present the first comprehensive study of the degradation of 16 mW state of the art UVC LEDs emitting at 280 nm. The study, based on combined electrical and spectral characterization, allows to identify different degradation regimes and mechanisms, and to formulate hypotheses on their origin.
Nicola Trivellin +2 more
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Development of DUV-LED grown on high-temperature annealed AlN template
Gallium Nitride Materials and Devices XVI, 2021A combination of the sputtering deposition and high-temperature annealing is a promising technique for preparing low-dislocation-density AlN templates. In this talk, MOVPE growth behavior of AlGaN films grown on the annealed AlN templates and on conventional MOVPE-grown AlN templates was comprehensively discussed.
Hideto Miyake
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High-speed solar-blind optical wireless communication enabled by DUV LED
Light-Emitting Devices, Materials, and Applications XXVI, 2022Kazunobu Kojima +2 more
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Collection and Inactivation Abilities of Virus Flowing in a Return Air Channel with a DUV- LED
The Proceedings of Mechanical Engineering Congress Japan, 2022Kotaro Takamure +2 more
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Geopolymer adhesives for DUV LED packaging: Synthesis and bonding mechanism
Journal of Alloys and CompoundsQinglei Sun
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Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting [PDF]
Physica ScriptaAchieving high luminescence intensity of deep-ultraviolet light-emitting diode (DUV-LED) is generally performed through the implementation of electron blocking layer (EBL) on the chip’s epilayers.
Mohammad Amirul Hairol Aman +2 more
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Light extraction analysis of AlGaN nanowires with inverse taper for DUV LEDs
Light-Emitting Devices, Materials, and Applications XXV, 2021Planar deep-ultraviolet (DUV) light emitting diodes (LEDs) suffer from extremely low external quantum efficiencies (EQEs) due to poor light extraction efficiencies (LEE) which are often less than 1%, hindering their widespread use. In AlGaN DUV LEDs with high Al-content, the positioning of the valence subbands leads to dominant transverse magnetic (TM)-
Bryan Melanson +3 more
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