Results 161 to 170 of about 1,029 (198)
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Hermetic SMD-type reflector cavity packaging for DUV LEDs
Light-Emitting Devices, Materials, and Applications XXIV, 2020Packaging materials usable for DUV-LEDs are limited as most organic materials are affected by DUV radiation. Packages used are TO-packages or 3D-structured ceramic housings with quartz lid. Due to DUV-LEDs radiating up to 50% of their light to the sides a significant share is lost.
Ulli Hansen +5 more
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IQE and EQE of the nitride-based UV/DUV LEDs
CLEO:2011 - Laser Applications to Photonic Applications, 2011Internal and external quantum efficiency and injection efficiency of nitride-based UV/DUV devices were investigated. Non radiative component in the photoluminescence and electroluminescence is found to be strongly correlated with the dislocation density.
H. Amano +12 more
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On the impact of a metal–insulator–semiconductor structured n-electrode for AlGaN-based DUV LEDs
Applied Optics, 2021In this work, a 280 nm AlGaN-based deep ultraviolet light-emitting diode (DUV LED) with a metal–insulator–semiconductor (MIS) structured n-electrode is fabricated and studied. The S i O 2 insulator layer is adopted to form the MIS structure by using an atomic layer deposition system.
Hua Shao +6 more
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Study of Geopolymer Adhesive Bonding with Alumina Ceramics for DUV LED Packaging
2025 26th International Conference on Electronic Packaging Technology (ICEPT)Qinglei Sun
exaly +2 more sources
Thermal Management for DUV LEDs
2019DUV LEDs possess very huge heating issue. On one hand, the sapphire substrate has a poor thermal conductivity, and on the other hand, DUV photons are easily absorbed by the absorptive p-GaN layer and the metal contact in the way of free carrier absorption, which further increases the self-heating effect for DUV LEDs.
Zi-Hui Zhang +3 more
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Degradation processes of 280 nm high power DUV LEDs: impact on parasitic luminescence [PDF]
Abstract With this work we report on characterization and reliability analysis of 280 nm high power commercial LEDs emitting 18 mW at 200 mA, with a peak wavelength of 280 nm. Spectral characterization reports the presence of a main emission peak and a sideband peak separated by 0.8 eV. DLTS analysis has also been
Trivellin N. +7 more
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The Light Extraction Efficiency for DUV LEDs
2019DUV LEDs have very low light extraction efficiency (LEE), which is caused by the unique optical polarization and the optically absorptive semiconductor and metal layers. This chapter reviews and analyzes the approaches that have ever been used to improve the LEE.
Zi-Hui Zhang +3 more
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Improve the Current Spreading for DUV LEDs
2019After the crystalline quality for Al-rich AlGaN layer is significantly improved, it is then the time to design novel DUV LED structures. DUV LEDs are driven electrically which get carrier transport and current injection involved. One of the challenges is the current crowding effect, which easily occurs in the DUV LEDs.
Zi-Hui Zhang +3 more
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Enhance the Electron Injection Efficiency for DUV LEDs
2019The unbalanced carrier injection for DUV LEDs illustrates that the electron tends to overflow from the active region. The underly mechanism arises from three aspects: (1) electrons cannot be consumed by forming electron-hole pairs and recombine radiatively in the active region, which is due to the insufficient hole injection, (2) the electron have ...
Zi-Hui Zhang +3 more
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Enhanced Light Extraction of DUV LEDs by Using a Quartz Lens With Three-Dimensional Structure
IEEE Photonics Technology Letters, 2021AlGaN based deep ultraviolet light-emitting diodes (DUV LEDs) have wide applications in many fields, such as air and water purification, disinfection, and biochemical inspection. However, the wall plug efficiency (WPE) of DUV LEDs is relatively low for these applications, which is due to the low light extraction efficiency (LEE) yielding limited light ...
Jinyang Qiu +4 more
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