Results 211 to 220 of about 37,664 (254)

Mimic Defense Techniques of Edge-Computing Terminal

2019 IEEE Fifth International Conference on Big Data Computing Service and Applications (BigDataService), 2019
In the current scenario, the sensor devices are extensively used to monitor water resources. And the edge-computing terminal is the link to connect the sensor nodes and services. However, due to the limitation of computer sources and the long-term operation of the sensor node, the risk of IoT node being maliciously forged is extremely high in the area ...
Xiaonan Sang, Qianmu Li
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Computer simulation of edge-terminated carbon nanoribbons

Bulletin of the Lebedev Physics Institute, 2017
In this paper, we present the results of ab initio simulation of edge-terminated carbon nanoribbons (CNRs). The calculations were performed using the electron density functional theory with the expansion of electron wave functions in plane waves in the Quantum Espresso software package [1].
A. V. Osadchy, E. D. Obraztsova, V. V. Savin, Yu. P. Svirko   +3 more
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Edge modes in finite-size systems with different edge terminals

Chinese Physics B
Abstract We investigate the behavior of edge modes in the presence of different edge terminations and long-range (LR) hopping. Here, we mainly focus on such model crystals with two different types of structures (type I: “…–P–Q–P–Q–…” and type II: “… = P–Q = P–Q = …”), where P and Q represent crystal lines (CLs), while the symbols “–” and
Huiping 会平 Wang 王, Li 莉 Ren 任, Xiuli 修丽 Zhang 张, Liguo 立国 Qin 秦   +3 more
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Geometric and electronic structures of sulfur-edge-terminated zigzag edge graphene nanoribbons

Physica E: Low-dimensional Systems and Nanostructures, 2013
Abstract The stable geometric and electronic structures of the fully and half sulfur-edge-functionalized ZGNRs at their widths of four zigzag carbon chains (S-4-ZGNRs) have been studied by using the ab initio density-functional method. It is found from our calculations that (1) under the periodic boundary condition, the two-dimensional plane ...
Rui Li, Ting Hu, Jinming Dong
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Edge termination strategies for a 4kV 4H–SiC thyristor

Solid-State Electronics, 2006
Abstract Thyristors able to block 4 kV have been fabricated and characterised. The experimental forward current is 1.3 A @ VAK = 10 V for a 9 mA gate current during 550 ns. The device active area is 2.3 mm2. The devices and their edge terminations have been designed using numerical simulations.
Brosselard, Pierre, Planson, Dominique, Scharnholz, Sigo, Raynaud, Christophe, Zorngiebel, V., Lazar, Mihai, Chante, Jean-Pierre, Spahn, E.   +7 more
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Edge termination of MoS2 and CoMoS catalyst particles

Catalysis Letters, 2000
The edge termination of MoS2 and CoMoS catalyst particles is studied by density functional calculations. We show that for structures without vacancies Mo‐terminated edges have the lowest edge energies. Creation of vacancies, which are believed to be active sites in these catalyst systems, leads to structures having mainly S‐terminated edges.
Line S. Byskov, Jens K. Nørskov, Bjerne S. Clausen, Henrik Topsøe   +3 more
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Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations

IEEE Transactions on Electron Devices, 2022
Tolen Nelson, Prakash Pandey, Daniel G. Georgiev, Michael R. Hontz, Andrew D. Koehler, Karl D. Hobart, Travis J. Anderson, Adrian Ildefonso, Raghav Khanna   +8 more
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A planar, nearly ideal, SiC device edge termination

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95, 2002
In this paper, a simple edge termination is described which can be used to achieve nearly ideal parallel plane breakdown voltage in silicon carbide devices. This novel termination, involves implantation of a neutral species on the edges of devices to form a high resistivity amorphous layer.
D. Alok, B.J. Baliga
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Highly efficient edge terminations for diamond schottky diodes

CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005., 2005
Two termination structures suitable for diamond Schottky diodes are presented in this paper. A thorough comparison between the two structures, concerning both electrical and geometrical aspects, is included. The study is based on theoretical models and extensive numerical results.
M. Brezeanu, S.J. Rashid, T. Butler, N.L. Rupesinghe, F. Udrea, A. Garraway, L. Coubeck, P. Taylor, G.A.J. Amaratunga, D.J. Twitchen, A. Tajani, M.P. Dixon   +11 more
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Edge Computing for Terminal Query Based on IoT

2019 IEEE International Conference on Smart Internet of Things (SmartIoT), 2019
With the fast development of the IoT, more and more attention has been paid to the acquisition of valuable information from real-time data streams. Nowadays, sampling-based approximate data analytics are properly the most widely used, which trade the output quality for efficiency.
Jianwen Ding, Dan Fan
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