Edge termination - Open Access .click

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Edge termination strategies for a 4kV 4H–SiC thyristor

Solid-State Electronics, 2006
Abstract Thyristors able to block 4 kV have been fabricated and characterised. The experimental forward current is 1.3 A @ VAK = 10 V for a 9 mA gate current during 550 ns. The device active area is 2.3 mm2. The devices and their edge terminations have been designed using numerical simulations.
Brosselard, Pierre +7 more
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Edging: From Terminals to Interfaces

This chapter explores edges and their significance in understanding the complex nature of platforms. Rather than being mere lines of demarcation, platform edges are presented as zones of fusion where different elements and practices converge. The chapter begins by exploring the historical evolution of platform edges through the lens of Amazon’s ...
openaire +1 more source

A Secure Authentication Approach for the Smart Terminal and Edge Service

2022
Qian He +4 more
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A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension

IEEE Electron Device Letters, 2011
Qingyun Huang, Woongje Sung, Edward Van Brunt +2 more
exaly

terminal edge

2014
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Planar Nearly Ideal Edge-Termination Technique for GaN Devices

IEEE Electron Device Letters, 2011
Jay Baliga
exaly

Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices

IEEE Transactions on Electron Devices, 2016
Jay Baliga, Qingyun Huang, Woongje Sung
exaly

Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-SiC High-Voltage Devices

IEEE Electron Device Letters, 2015
Jay Baliga, Qingyun Huang, Woongje Sung
exaly