Results 191 to 200 of about 320,999 (343)

Fieldoscopy at the quantum limit. [PDF]

open access: yesLight Sci Appl
Zimin DA, Ashoka A, Reiter F, Rao A.
europepmc   +1 more source

Resolving the Structural Duality of Graphene Grain Boundaries

open access: yesAdvanced Materials, EarlyView.
Cantilever ncAFM resolves the atomic structure of grain boundaries in graphene, revealing coexisting stable and metastable types. Both contain pentagon/heptagon defects, but metastable GBs show irregular geometries. Modeling shows metastable GBs form under compression, exhibiting vertical corrugation, while stable GBs are flat.
Haojie Guo   +11 more
wiley   +1 more source

Electrical Breakdown in Vacuum

open access: yesSHINKU, 1964
Kaizo TAKAMISAWA, Kichinosuke YAHAGI
openaire   +2 more sources

Crystal Growth Engineering for Dendrite‐Free Zinc Metal Plating

open access: yesAdvanced Materials, EarlyView.
This research employed the rare‐earth ion dysprosium (Dy) to modulate aqueous zinc (Zn) metal plating. Integrated multiscale experiments and computational modeling unveiled the preferential adsorption of Dy on specific crystal facets, which activated screw dislocation‐driven Zn growth.
Guifang Zeng   +10 more
wiley   +1 more source

Trace BaTiO<sub>3</sub> Doping-Derived PVDF-Based Composite Thick Film for Dielectric Energy Storage. [PDF]

open access: yesMaterials (Basel)
Wang L   +8 more
europepmc   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

open access: yesAdvanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades   +7 more
wiley   +1 more source

Low breakdown field and high ionization index in ReSe<sub>2</sub> avalanche field-effect transistors. [PDF]

open access: yesNat Commun
Zhang J   +12 more
europepmc   +1 more source

High breakdown electric field (&gt;5 MV/cm) in UWBG AlGaN transistors [PDF]

open access: diamond
Seungheon Shin   +10 more
openalex   +1 more source

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